Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applications

Lee, Jaehyeong; Lakshminarayan, N.; Dhungel, Suresh Kumar; Kim, Kyunghae; Yi, Junsin

doi:10.1016/j.solmat.2008.10.013

Cited by 48 publications

(20 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For example, In 2 S 3 was used for the n-type buffer layer of CIGS solar cells [12]. Crystalline silicon solar cells are presently the predominant photovoltaic devices among various solar cells due to their higher photovoltaic conversion efficiency, and long-term stability [13]. Recently, Abd-El-Rahman and Darwish et al reported a p-Sb 2 S 3 /n-Si heterojunction photovoltaic that was fabricated by using thermal evaporation technique [14], which showed J sc = 14.53 mA cm -2 , fill factor = 0.32, and η = 4.65%.…”

Section: Introductionmentioning

confidence: 99%

Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

Hsiao

et al. 2014

Nanoscale Res Lett

View full text Add to dashboard Cite

We demonstrate that heterojunction photovoltaics based on hydrothermal-grown In2S3 on p-Si were fabricated and characterized in the paper. An n-type In2S3 nanoflake-based film with unique 'cross-linked network’ structure was grown on the prepared p-type silicon substrate. It was found that the bandgap energy of such In2S3 film is 2.5 eV by optical absorption spectra. This unique nanostructure significantly enhances the surface area of the In2S3 films, leading to obtain lower reflectance spectra as the thickness of In2S3 film was increased. Additionally, such a nanostructure resulted in a closer spacing between the cross-linked In2S3 nanostructures and formed more direct conduction paths for electron transportation. Thus, the short-circuit current density (Jsc) was effectively improved by using a suitable thickness of In2S3. The power conversion efficiency (PCE, η) of the AZO/In2S3/textured p-Si heterojunction solar cell with 100-nm-thick In2S3 film was 2.39%.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

Hsiao

et al. 2014

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…Photovoltaic industry requires ultra-thin silicon wafers with minimum subsurface damage [3]. Currently, conventional inner diameter (ID) saws and wire saws are the two main processes used for slicing silicon ingots.…”

Section: Introductionmentioning

confidence: 99%

Multi-objective optimization for silicon wafer slicing using wire-EDM process

Dongre

Zaware²,

Dabade³

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…1 The article is published in the original. This fabrication carried out on high temperature dur ing annealing process from 800-1050°C and variable thickness of antireflection coating (ARC) layer from 50-90 nm thick [6][7][8][9]. The photovoltaic properties of Si 3 N 4 layer have been compared with SiO 2 layer to determine which material is suitable for fabricating single layer ARC [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of mono-crystalline silicon solar cell

Azim¹,

Yahia

Sakr

2014

Appl. Sol. Energy

View full text Add to dashboard Cite

The effects of temperature on the photovoltaic performance of mono crystalline silicon solar cell have been investigated by current voltage characteristics and transient photo response measurements. The fill factor and efficiency values of the solar cell at various temperatures were determined. The variation in the power conversion efficiency and fill factor values is mainly due to the change of short circuit current, open circuit voltage V oc with temperature for the studied mono crystalline silicon cell. The increase in the short circuit current I sc with the increase of illuminations and temperature is interpreted by the increase in the gen eration of electron hole pairs by thermal energy recombination mechanism. The mono crystalline silicon solar cell exhibits a high efficiency of 14.215% at (AM 1.5) 100 mW/cm 2 . The obtained results indicate that the studied solar cell exhibits a high stability, sensitivity and quality and it can be used for photovoltaic power generation systems as a clean power source.

show abstract

Optimization of fabrication process of high-efficiency and low-cost crystalline silicon solar cell for industrial applications

Cited by 48 publications

References 8 publications

Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

Characterization of photovoltaics with In2S3 nanoflakes/p-Si heterojunction

Multi-objective optimization for silicon wafer slicing using wire-EDM process

Characterization of mono-crystalline silicon solar cell

Contact Info

Product

Resources

About