Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Fabris, L.; Manfredi, P.

doi:10.1109/nssmic.2001.1009297

Cited by 3 publications

(5 citation statements)

References 32 publications

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“…Equation (10) shows that 1 noise gives an ENC contribution dependent on the peaking time, if . From (10), an effective evaluation of ENC when the gate width is scaled to match the detector capacitance is provided by the normalized spectral density [6] (11) Fig. 8 compares the product of 0.18 m NMOS from two foundries.…”

Section: Effect Of Noise In Charge Measurementsmentioning

confidence: 99%

“…The scaling acts also in reducing the thickness of the gate oxide to a few nanometers, which results in a remarkable improvement in radiation hardness features of the CMOS processes. This makes these technologies suitable for rad-hard front-end design [6] in space and high-energy physics applications, if enclosed layout techniques are used to mitigate leakage current contributions [7]. However, it is very important to monitor how process parameters are influenced by scaling, especially with respect to noise, which can be affected by gate oxide quality and short channel phenomena.…”

Section: Introductionmentioning

confidence: 99%

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Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Manghisoni

Ratti

et al. 2005

IEEE Trans. Nucl. Sci.

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Submicrometer CMOS technologies provide well-established solutions to the implementation of low-noise front-end electronics for a wide range of detector applications. Since commercial CMOS processes maintain a steady trend in device scaling, it is essential to monitor the impact of these technological advances on the noise parameters of the devices. In this paper we present the results of an extensive analysis carried out on CMOS transistors fabricated in 0.35, 0.25, and 0.18 m technologies from different foundries. This allows us to evaluate the behavior of 1 and channel thermal noise parameters with different gate oxide thickness and minimum channel length and to give an estimate of their process-to-process spread. The experimental analysis is focused on actual device operating conditions in monolithic detector readout systems. This means that moderate or weak inversion are often the only relevant regions for front-end devices. To account for different detector requirements, the noise behavior of devices with different geometries and input capacitance was investigated. The large set of data gathered from the measurements provides a powerful tool to model noise parameters and establish front-end design criteria in deep submicrometer CMOS processes.

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Section: Effect Of Noise In Charge Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Manghisoni

Ratti

et al. 2005

IEEE Trans. Nucl. Sci.

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“…All circuits have a cascoded PMOS input, because PMOS transistors achieve a good trade-off between white and 1/f noise [2], [3]. They are named by letters A, B, C and D. Here is a short description of each of them:…”

Section: Circuit Designmentioning

confidence: 99%

“…For medical imaging systems, the main constraint is to insure high integration density and low power. But for both applications, low noise is required and thus global optimization of the performance will require making various trade-offs [1]- [3].…”

Section: Introductionmentioning

confidence: 99%

Experimental comparison of discrete and CMOS charge sensitive preamplifiers for CZT radiation detectors

Montemont¹,

Rostaing²,

Verger³

2002 IEEE Nuclear Science Symposium Conference Record

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During recent years, many readout integrated circuits for CZT radiation detectors have been studied particularly for use on pixilated detectors in imaging applications. The main challenge is to keep noise performance similar to discrete preamplifiers, even with lower power. This paper presents the design and the experimental evaluation of CMOS integrated charge sensitive preamplifiers intended for CZT radiation detectors. A comparison is made with discrete preamplifiers.Index Terms--charge sensitive preamplifier, CZT, gamma-ray detectors, X-ray detectors, equivalent noise charge, count rate.0-7803-7636-6/03/$17.00 ©2003 IEEE.

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“…Perhaps even more importantly, it acted also in the sense of reducing the thickness of the gate oxide to a few nanometers. The result of a shorter gate and a thinner gate oxide is a remarkable improvement in noise and radiation hardness features of the CMOS processes, such to make them fully adequate for front-end design [6,7].…”

Section: Introductionmentioning

confidence: 99%

Trends in the design of front-end systems for room temperature solid state detectors

Manfredi

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515)

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Abstract--The paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors.

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Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Cited by 3 publications

References 32 publications

Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Experimental comparison of discrete and CMOS charge sensitive preamplifiers for CZT radiation detectors

Trends in the design of front-end systems for room temperature solid state detectors

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