Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 μm

Abstract

In the present paper, a comprehensive computer simulation is used to determine optimal structure of the InPbased GaInNAs quantum-well (QW) active region and to investigate a possibility of reaching room-temperature (RT) continuous-wave (CW) single-fundamental-mode 2.33-µm operation of vertical-cavity surface-emitting laser (VCSEL) with such an active region. From among various considered InP-based active regions, the one with the Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QW, i.e. with barriers lattice matched to InP, seems to be optimal for the 2.33-µm VCSEL performance. Its QW material is chosen for the required long-wavelength emission whereas its barrier is expected to ensure promising laser performance at room and higher temperatures. The latter is mostly connected with the QW conduction band offset equal in the above active region to as much as 413 meV, which is much larger than those of its possible lattice matched to InP competitors, e.g. 276 meV for the Ga 0.47 In 0.53 As barrier and 346 meV for the Ga 0.327 In 0.673 As 0.71 P 0.29 one. Our simulation reveals that from among various considered structures, a VC-SEL with a 4-µm-diameter tunnel junction and two 6-nm Ga 0.15 In 0.85 N 0.015 As 0.985 /Al 0.138 Ga 0.332 In 0.530 As QWs exhibits the lowest calculated threshold current of 0.88 mA. Its promising RT CW performance suggests that it may represent a very interesting alternative to GaSb-based VCSELs.

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

“…18 cm −3 which should be achievable in mid-infrared VCSELs [25,27], irrespective of nitrogen content in QW and aluminium content in barriers, the positive gain is not available in this QW for wavelength values higher a) b) Fig. 5.…”

“…In this section, two different QW material systems will be considered for which it is possible to obtain laser light in the mid-infrared range: GaInNAs/AlGaInAs on InP (to the best of our knowledge only theoretical studies were conducted for these active regions [12,[23][24][25]) and GaInAsSb/AlGaAsSb on GaSb. An impact of parameters such as nitrogen/antimony content, strain, thickness of these QWs is to be investigated.…”