Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

“…It is obvious that the optimum ELO growth temperature depends on many parameters such as slope of liquidus curve of the phase diagram, geometry of LPE system, etc., so it must be determined experimentally for each particular case under study. Values of T opt equal to 500 o C, 580 o C and 530 o C have been reported for LPE growth of InP/InP [14], GaAs/GaAs [15] and GaAs/Si [17] ELO systems, respectively.…”

Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

“…These dislocations often act as non-radiative centers, and therefore should be reduced to realize surpassing optoelectronic devices. To reduce the density of dislocation in an epitaxial layer, micro-channel epitaxy (MCE) is a very promising technique, which mainly consists of lateral growth from micrometer-size window by liquid phase epitaxy and accomplished decisive superiority for growing dislocation-free areas [1][2][3][4][5].…”

Understanding of crystal growth mechanisms through experimental studies of semiconductor epitaxy

“…7 in Si LPE case. It has been demonstrated that dislocation free epitaxial layers have been grown even in GaAs on Si heteroepitaxy [30].…”