Optimization of growth of In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells

Sharma, Ramphal; Mane, Rajaram S.; Min, Sun Seek; Han, Sung‐Hwan

doi:10.1016/j.jallcom.2009.01.070

Cited by 69 publications

(36 citation statements)

References 17 publications

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“…Both In 2 O 3 film and Ga 2 O 3 film are good transparent n-type semiconductors with direct band gap of 3.6 [4] and 4.9 eV [5], respectively. In 2 O 3 film with the bixbyite structure is a very important material which shows excellent opto-electrical properties and has been widely used in many fields such as solar cells, gas sensors, liquid crystal displays and so on [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD

Kong

Yang

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD

Kong

Yang

et al. 2010

Journal of Alloys and Compounds

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“…2, In 2 O 3 thin film obtained approximately similar energy bandgap value of 3.81 eV, little higher compared to the theoretical E g value of In 2 O 3 with 3.75 eV [9]. According to Liao et al, thin film preparation method and different annealing temperature is the factor that influences the energy bandgap value for the same metal oxide semiconductors [32].…”

Section: Resultsmentioning

confidence: 82%

“…Various metal oxide alternatives have been studied to improve the drawback in TiO 2 -based DSSCs such as, ZnO, In 2 O 3 , SnO 2 , and Nb 2 O 5 [5][6][7][8]. Indium oxide (In 2 O 3 ) has a bandgap of 3.75 eV [9] and is used in various applications such as gas sensors, photocatalysis, DSSCs, etc. [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Morphological and electron mobility studies in nanograss In2O3 DSSC incorporating multi-walled carbon nanotubes

Mahalingam

Abdullah

Shaari

et al. 2016

Ionics

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In 2 O 3 and In 2 O 3 -MWCNTs, thin films were prepared by means of sol-gel spin coating technique for dyesensitized solar cells (DSSCs). The morphological characteristics of In 2 O 3 and In 2 O 3 -MWCNT thin films were studied via atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The porous and rough surface structure of nanograss In 2 O 3 increased the surface area for improved dye loading. The low photovoltage issue in In 2 O 3 -based DSSCs was addressed by the incorporation of MWCNTs. The bandgap decreased when In 2 O 3 was incorporated with MWCNTs. The presence of MWCNTs in the thin film caused the fermi level (E F ) to shift upward and this leads to a larger energy gap between E F and the iodine redox level (E REDOX ) that results in higher photovoltage. The In 2 O 3 -MWCNT-based DSSCs exhibited better photovoltaic performance than In 2 O 3 -based DSSC with photovoltaic efficiency of 1.29 and 0.14 %, respectively. The electrochemical impedance spectroscopy (EIS unit) supported the photovoltaic performance by quantifying that the In 2 O 3 -MWCNT thin films provide more efficient charge transfer with the lowest effective recombination rate and high electron lifetime, hence improving the performance of DSSCs.

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“…Its smaller ionic radius (78 pm) compared with (94 pm) for In 3+ causes local strains and enhance the formation of grain boundaries. A variety of deposition techniques have been used for the preparation of undoped and doped In 2 O 3 films such as reactive thermal evaporation method, electrodeposition, radio frequency magnetron sputtering [24][25][26][27] . Li et al reported a transparent conducting V: In 2 O 3 thin films for hole injection in organic light-emitting devices (OLEDs) prepared by a modification-specific reactive thermal coevaporation method, which shows a minimum electrical resistivity of 7.95×10 -4 Ω-cm and good optical transmittance in the visible spectra range 24 .…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

et al. 2016

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Vanadium (5 at. %) doped Indium Oxide (V: In 2 O 3 ) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10 -3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K range with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness.

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Optimization of growth of In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells

Cited by 69 publications

References 17 publications

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD

Morphological and electron mobility studies in nanograss In2O3 DSSC incorporating multi-walled carbon nanotubes

Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

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