Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode
“…This composite tunneling effect is related to the diffusion and recombination of carriers, which mainly occurs in the diodes of wide forbidden materials. 41 In region III (V 4 2.1 V), the curve presents a power relationship and follows the I-V b equation. Carrier transport is mainly affected by space charge limited current (SCLC) conduction.…”
Section: B-ga 2 O 3 /N-gan Heterojunctionsmentioning
The low lattice mismatch between β-Ga2O3 and GaN alleviates interface defects and improves device performance, and the EL spectra of Ga2O3/GaN heterojunction devices emit ultra-violet and yellow-green light at forward and reverse bias.
“…This composite tunneling effect is related to the diffusion and recombination of carriers, which mainly occurs in the diodes of wide forbidden materials. 41 In region III (V 4 2.1 V), the curve presents a power relationship and follows the I-V b equation. Carrier transport is mainly affected by space charge limited current (SCLC) conduction.…”
Section: B-ga 2 O 3 /N-gan Heterojunctionsmentioning
The low lattice mismatch between β-Ga2O3 and GaN alleviates interface defects and improves device performance, and the EL spectra of Ga2O3/GaN heterojunction devices emit ultra-violet and yellow-green light at forward and reverse bias.
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