Optimization of high Q integrated inductors for multi-level metal CMOS

Merrill, R.B.; Lee, T.W.; You, Hao-Jun; Rasmussen, R. A.; Moberly, L.

doi:10.1109/iedm.1995.499381

Cited by 64 publications

(27 citation statements)

References 3 publications

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“…Further reduction in area is achieved using three-dimensional structures [10]. These structures benefit from strong mutual coupling between vertically adjacent metal layers, and can generate the same inductance in less area as compared with planar inductors.…”

Section: Stacked Inductorsmentioning

confidence: 99%

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

Dickson

LaCroix

Boret

et al. 2005

IEEE Trans. Microwave Theory Techn.

191

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Abstract-Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with 21 of 2.5 dB at 50 GHz, and which offers improved performance and less area (30 m 30 m) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured -parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

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Section: Stacked Inductorsmentioning

confidence: 99%

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

Dickson

LaCroix

Boret

et al. 2005

IEEE Trans. Microwave Theory Techn.

191

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“…This approach considerably reduces the area of the system. However, by using a standard CMOS fabrication process, passive inductors usually have small inductance (typically in the range of nanohenries [23]) and high resistance, leading to quality factors with maximum value at high frequency (from hundreds megahertz up to few gigahertz) and usually lower than 10 [24], [25]. For these reasons, this approach is not suitable for power links operating in the low megahertz range.…”

Section: Design Techniques For Inductive Linksmentioning

confidence: 99%

A Study of Multi-Layer Spiral Inductors for Remote Powering of Implantable Sensors

Olivo

Carrara

Micheli

2013

IEEE Trans. Biomed. Circuits Syst.

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Abstract-An approach based on multi-layer spiral inductors to remotely power implantable sensors is investigated. As compared to single-layer inductors having the same area, multi-layer printed inductors enable a higher efficiency (up to 35% higher) and voltage gain (almost one order of magnitude higher). A system conceived to be embedded into a skin patch is designed to verify the performance. The system is able to transmit up to 15 mW over a distance of 6 mm and up to 1.17 mW where a 17 mm beef sirloin is placed between the inductors. Furthermore, the system performs downlink communication (up to 100 kbps) and uplink communication based on the backscattering technique (up to 66.6 kbps). Long-range communication is achieved by means of a bluetooth module.Index Terms-Energy harvesting, implantable sensors, inductive link, multi-layer spiral inductors, remote powering.

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“…After multiplying (9) and (10) by , calculating the integral over from 0 to , and using (13a) and (13b), one arrives at (14) (15) Here, the integrations are carried out over the cross sections of the rings in the --plane (perpendicular to the azimuthal unit vector ), , and…”

Section: B Quasi-one-dimensional (1-d) Approximationmentioning

confidence: 99%

Mixed-Potential Volume Integral-Equation Approach for Circular Spiral Inductors

Rejaei

2004

IEEE Trans. Microwave Theory Techn.

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Abstract-The electromagnetic behavior of circular spiral inductors on layered substrates is analyzed by using the concentric ring approximation. The problem is formulated in terms of mixedpotential volume integral equations. The latter are semianalytically solved within the quasi-one-dimensional approximation. The result is a fast computationally efficient model, which takes into account substrate RF loss, as well as nonuniform current density distribution across inductor windings. The results are in good agreement with experimental data from various inductors on both low-and high-resistivity silicon substrates.

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Optimization of high Q integrated inductors for multi-level metal CMOS

Cited by 64 publications

References 3 publications

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

A Study of Multi-Layer Spiral Inductors for Remote Powering of Implantable Sensors

Mixed-Potential Volume Integral-Equation Approach for Circular Spiral Inductors

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