31st European Solid-State Device Research Conference 2001
DOI: 10.1109/essderc.2001.195242
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Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation

Abstract: A major goal in the process development of high voltage processes is the design of devices with given breakdown voltages and low switch on resistances. To reach this goal it is necessary to optimize the space charge regions of the device. Unfortunately these effects are three-dimensional and a device optimization needs the support of accurate three-dimensional simulation, which is shown in this article.

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