Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Honda, Anna; Koizumi, Akira; Nishitani, T.; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.mee.2020.111229

Cited by 16 publications

(5 citation statements)

References 19 publications

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Section: Semiconductor Photocathodesmentioning

confidence: 99%

“…These dopants, such as indium (In) or phosphorous (P) can decrease the E gap to a more suitable wavelength in the visible spectral range and recently published studies reported on the potential usage of such novel InGaN photocathodes. [157][158][159] 5.4.2 Preparation. The commercially available semiconductor undergoes a wet-chemical cleaning before being installed in a UHV chamber.…”

Section: Gallium Nitridementioning

confidence: 99%

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Review of photocathodes for electron beam sources in particle accelerators

2023

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Section: Semiconductor Photocathodesmentioning

confidence: 99%

Section: Gallium Nitridementioning

confidence: 99%

Review of photocathodes for electron beam sources in particle accelerators

2023

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“…12,13 An InGaN is suitable for industrial use because of the availability of a visible laser as an excitation light source and transmission-type structure. 14 The following are the three goals of this study. The first is the development of an InGaN photocathode electron gun that can be mounted on the SEM, and the evaluation of the electron beam size at the electron beam emission point, maximum emission current, and electron beam transverse energy, which are important factors for realizing high probe current in the SEM.…”

Section: Introductionmentioning

confidence: 99%

Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging

Koizumi

Shikano

Noda

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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An InGaN photocathode with a negative electron affinity (NEA) surface is suitable for industrial use because of features such as a long quantum efficiency lifetime, availability with a visible laser as an excitation light source, and the presence of a transmission-type structure. The first objective is the development of an InGaN photocathode electron gun that can be mounted on a scanning electron microscope (SEM) and the evaluation of the electron beam size at the emission point, maximum emission current, and transverse energy of the electron beam, which are important factors for realizing a high probe current in the SEM. The second objective is the evaluation of emission current stability, while the third objective is the generation of a pulsed electron beam and multi-electron beam from the InGaN photocathode. The parameters of the electron beam from the photocathode electron gun were an emission beam radius of 1 μm, transverse energy of 44 meV, and an emission current of up to 110 μA. Using a high beam current with low transverse energy from the photocathode, a 13 nA probe current with 10 nm SEM resolution was observed with 15 μA emission. At 15 μA, the continuous electron beam emission for 1300 h was confirmed; at 30 μA, the cycle time between the NEA surface reactivations was confirmed to be 90 h with 0.043% stability. Moreover, a 4.4 ns pulsed e-beam with a 4.7 mA beam current was generated, and a 5 × 5 multielectron beam with 12% uniformity was then obtained. The advantages of the InGaN photocathode, such as high electron beam current, low transverse energy, long quantum efficiency lifetime, pulsed electron beam, and multi-electron beam, are useful in industries including semiconductor device inspection tools.

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“…Using III-V compound semiconductor substrates, such as GaAs, with a negative electron affinity (NEA) surface is useful to generate pulsed electrons with small energy dispersion with high emittance. However, it is difficult to handle because the usable vacuum environment is severe, and an extremely high vacuum is required to extend the lifetime [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

Yasuda

Nishitani

Ichikawa

et al. 2021

QuBS

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The development of pulsed electron sources is applied to electron microscopes or electron beam lithography and is effective in expanding the functions of such devices. The laser photocathode can generate short pulsed electrons with high emittance, and the emittance can be increased by changing the cathode substrate from a metal to compound semiconductor. Among the substrates, nitride-based semiconductors with a negative electron affinity (NEA) have good advantages in terms of vacuum environment and cathode lifetime. In the present study, we report the development of a photocathode electron gun that utilizes photoelectron emission from a NEA-InGaN substrate by pulsed laser excitation, and the purpose is to apply it to material nanofabrication and high-speed observation using a pulsed transmission electron microscope (TEM) equipped with it.

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Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

Cited by 16 publications

References 19 publications

Review of photocathodes for electron beam sources in particle accelerators

Review of photocathodes for electron beam sources in particle accelerators

Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

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