Optimization of InP–InGaAs HPT Gain: Design of an Opto-Microwave Monolithic Amplifier

Polleux, Jean-Luc; Paszkiewicz, L.; Billabert, Anne‐Laure; Salset, J.; Rumelhard, Christian

doi:10.1109/tmtt.2004.823555

Cited by 30 publications

(20 citation statements)

References 8 publications

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“…3) [2,3]. At reasonable light levels, the resulting current is proportional to the incident optical power, and the photoresponsivity can be expressed as where is the optical wavelength, R is the optical-power reflection coefficient at the air/silicon interface (close to 30% under normal incidence and without any antireflective layer), ␣ (dB/m) is the SiGe absorption coefficient (depending on the wavelength and Germanium concentration [4]), L D (m) is the carriers diffusion depth in silicon, and w (m) is the space-charge thickness.…”

Section: Structure and Modeling Of Heterojunction Phototransistorsmentioning

confidence: 99%

“…Due to its important applications in microwave and optical engineering, FSS has attracted the attention of many researchers and several methods have been developed to analyze different types of FSS structures [1][2][3][4][5][6][7]. However, most previous methods focus on the analysis of flat FSS structures of infinite extent.…”

Section: Introductionmentioning

confidence: 99%

“…For a finite-extending but flat FSS structure, the most effective method is to use the CG-FFT method [2,3], in which the fast Fourier transform is applied to speed up the matrix-vector multiplication in the conjugate-gradient iterations. Theoretically, this approach can still be applied if the structure is curved.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design of an optically frequency or phase‐controlled oscillator for hybrid fiber‐radio LAN at 5.2 GHz

Egels¹,

Delacressonnière²,

Sahabun³

et al. 2005

Micro & Optical Tech Letters

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International audienceWe propose the design of a transceiver directly converting an OOK optical signal into a microwave carrier that is either FSK or PSK modulated. The transceiver consists of a microwave oscillator based upon a silicon-germanium (SiGe) heterojunction phototransistor (HPT). The simulations show that a binary rate of 200 Mb/s is possible for a carrier of 5.2 GHz and reaches 1 Gb/s with a carrier at 12 GHz

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Section: Structure and Modeling Of Heterojunction Phototransistorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design of an optically frequency or phase‐controlled oscillator for hybrid fiber‐radio LAN at 5.2 GHz

Egels¹,

Delacressonnière²,

Sahabun³

et al. 2005

Micro & Optical Tech Letters

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show abstract

“…However, with a square window of 1 µm side, only 7.3% coupling coefficient could be achived from a single-mode fiber of 4.1 µm mode-field diameter. With an appropriate lens, it could be improved to 40%, achieving 0,22 A/W, near from the experimental value of [5].…”

Section: Hbt Modelisationmentioning

confidence: 73%

Design and realization of an optically controlled oscillator for radio over fiber at 5.2 GHz

Lecoy¹,

Delacressonnière²

2006

2006 International Topical Meeting on Microwave Photonics

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We propose the design of a device directly converting an OOK (on-off keying) baseband optical signal from an optical fiber into a microwave carrier. It is based upon a microwave oscillator, using a Silicon-Germanium (SiGe) Heterojunction Phototransistor (HPT), realized in fully-integrated MMIC 0,35 µm technology. Simulations showed that the oscillation frequency is controlled by an optical illumination of the base-collector junction, increasing the junction capacitance, thus decreasing the oscillation frequency. A FSK (frequency shift keying) modulation is possible. If the frequency is locked by current injection from a reference oscillator, a PSK (phase shift keying) modulation becomes possible. First experimentations on the phototransistor confirmed these simulations.Index Terms -Radio over fiber, phototransistor, photooscillator, WLANs, digital modulations.

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“…Static measurement of the photocurrent I PH was performed in photodiode mode (V be ¼ 0) depending on the optical power P at the fiber end (Fig. Due to the internal structure of the phototransistor (directly derived from a foundry transistor) and its optimization in transition frequency, no gain was observed in the phototransistor mode compared to the photodiode mode, as in [5,10,11]. The characteristic is rather linear with a slight saturation effect at high illumination.…”

Section: I I S T a T I C M E A S U R E M E N T Smentioning

confidence: 99%

SiGe heterojunction bipolar phototransistor for optics–microwaves interfacing

Lecoy¹,

Delacressonnière²,

Pasquet³

2011

Int. J. Microw. Wireless Technol.

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A new SiGe heterojunction bipolar phototransistor (HPT) based on a commercially available process was designed, realized, and experimentally characterized. Its internal characteristics, mainly the collector-to-base capacitance, vary significantly with the received light power, making it suitable as an active element of a light-controlled photo-oscillator. It can also be a key component of optical network-on-chip (ONoC). Its responsivity was improved and its transition frequency remains in the range of 30 GHz.

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Optimization of InP–InGaAs HPT Gain: Design of an Opto-Microwave Monolithic Amplifier

Cited by 30 publications

References 8 publications

Design of an optically frequency or phase‐controlled oscillator for hybrid fiber‐radio LAN at 5.2 GHz

Design of an optically frequency or phase‐controlled oscillator for hybrid fiber‐radio LAN at 5.2 GHz

Design and realization of an optically controlled oscillator for radio over fiber at 5.2 GHz

SiGe heterojunction bipolar phototransistor for optics–microwaves interfacing

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