Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

Abstract

High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitative analysis of damage annealing of low-dose, high-energy implanted (001) silicon, implanted with dopants smaller than the host atom. The choice of proper Bragg reflection for the rocking-curve measurements is shown to be of crucial importance. The graphic construction of the Ewald sphere is a useful aid for this purpose. As the in-plane lattice constant is confined by the underlying substrate, a change occurs in the perpendicular direction only. Therefore the (026)~ reflection appears to be the most suitable for the detection of changes in lattice constant caused by implantation damage. Qualitative analysis of rocking curves of P-and B-implanted Si samples was compared with electrical measurements and cross-section transmission electron micrographs. It could be established that the minimum implantation doses of P and B at energies ranging from 0.5 to 1.5 MeV, for which HR-XRD is sensitive enough, are about 1.5 x 10 ~4 cm -2 and 5 x 10 ~3 cm -2 respectively. The minimum peak temperature needed for complete damage anneal by transient-rapid thermal annealing was about 1400 K for all doses considered.

X-ray multiple diffraction on the shallow junction of B in Si(001)

“…One can observe that the as-implanted sample presents a small intensity asymmetry at the left side of the peak tail. It indicates a tensile strain (cell expansion) [14] in the crystal lattice due to the excess of interstitial and vacancy point defects. The annealed samples show a symmetric increase of the peak basis intensity, since the first annealing stage (10 s) is sufficient to promote the lattice ion activation.…”

Dislocation formation and B transient diffusion in C coimplanted Si

“…25 The crystal is then tetragonally distorted. To maximize the measurement sensitivity for out-of-plane strain, rocking curves were recorded performing an /2 asymmetric scan around the ͑026͒ reflection 26 with an angular stepsize of 0.9 arcsec. In B-implanted samples dislocation loops formed during the annealing cause diffuse scattering.…”

Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon

“…[8][9][10][11][12] A number of techniques, including cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering/channeling spectroscopy (RBS), deep-level transient spectroscopy (DLTS), X-ray diffraction analysis (XRD), and electron paramagnetic resonance (EPR), have been used to investigate the nature and distribution of these secondary defects. [13][14][15][16][17][18][19][20] Among the various techniques, XTEM is the most utilized one. However, the fabrication procedure of TEMs sample is complicated and time consuming.…”