Optimization of Low-Loss Al2O3 Waveguide Fabrication for Application in Active Integrated Optical Devices

Wörhoff, Kerstin; Ay, F.; Pollnau, Markus

doi:10.1149/1.2392916

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…The Al 2 O 3 layer is deposited on top of the polished wafer by the reactive sputtering technique using radio frequency (RF) power (AJA ATC 1500) [Fig. 7(f)] [47]. During the sputtering process, the wafer with the bottom Si 3 N 4 layer is heated up to about 650 °C to reduce the incorporation of OHgroups on the layer.…”

Section: Fabricationmentioning

confidence: 99%

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Dijkstra

Yong

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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Low-cost, high-performance integration technologies are instrumental for active-passive integrated photonics devices. The monolithic integration of Al 2 O 3 and Si 3 N 4 is studied, enabling to combine the promising optical features of Si 3 N 4 with the excellent optical gain characteristics of rare-earth-ion doped Al 2 O 3 . The Al 2 O 3 and Si 3 N 4 layers are separated by a thin SiO 2 film and coupled by adiabatically width-tapered Al 2 O 3 and thickness-tapered Si 3 N 4 waveguides. In this paper, a detailed characterization of the couplers, as well as a study of the influence of the different design parameters and fabrication tolerances on the final device performance is presented. Test structures are characterized under transverse electric (TE) polarization. Measured loss per coupler is as low as 0.26 ± 0.03 dB at the wavelength of 1030 nm, and below 0.24 dB in the spectral window of 1460-1635 nm. Lateral misalignment of ±1 µm results in less than 0.6 dB increase of the coupler loss at 1030 nm, and the tolerance of misalignment goes up to 1.7 µm at the investigated longest wavelength of 1635 nm without introducing extra coupler losses. The reported integration technology paves the way toward a double-layer platform monolithically integrating Si 3 N 4 and rare-earth-ion doped Al 2 O 3 for active-passive photonic functionalities.

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Section: Fabricationmentioning

confidence: 99%

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Dijkstra

Yong

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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“…A strong bended magnetic field on the target surface traps the electrons close to the target to enhance the overall sputtering yield. DC reactive sputtering suffers from continued localized charge build up when the target is partially oxidized, with the consequent reduction in optical quality of the deposited layers due to arcing [74]. RF reactive sputtering has been demonstrated to lead to high optical quality layers with low optical propagation losses.…”

Section: Reactive Magnetron Sputtering Of Optical Quality Al 2 O 3 Filmsmentioning

confidence: 99%

Rare-earth ion doped Al₂O₃ for active integrated photonics

Hendriks

Chang

Emmerik

et al. 2020

Advances in Physics: X

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“…The wide range over which the deposition parameters have been varied is given in Table 1. A detailed discussion on the change of thin-film properties as a function of processing parameters can be found elsewhere [21]. The most important difference between deposition with DC and RF based sputtering was found to be the optical loss in the planar waveguides.…”

Section: Un-doped Al 2 O 3 Filmsmentioning

confidence: 99%

Optimization of Al 2 O 3 :Er3⁺waveguide technology for active integrated optical devices

Wörhoff

Bradley

et al. 2008

SPIE Proceedings

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Amorphous Al 2 O 3 is a promising host material for active integrated optical applications such as tunable rare-earth-iondoped laser and amplifier devices. The fabrication of slab and channel waveguides has been investigated and optimized by exploiting reactive co-sputtering and ICP reactive ion etching, respectively. The Al 2 O 3 layers are grown reliably and reproducibly on thermally oxidized Si-wafers at deposition rates of 2-4 nm/min. Optical loss of as-deposited planar waveguides as low as 0.11±0.05 dB/cm at 1.5-µm wavelength has been demonstrated. The channel waveguide fabrication is based on BCl 3 /HBr chemistry in combination with standard photoresist and lithography processes. Upon process optimization channel waveguides with up to 600-nm etch depth, smooth side walls and optical losses as low as 0.21±0.05 dB/cm have been realized. Rare-earth-ion doping has been investigated by co-sputtering from a metallic Er target during Al 2 O 3 layer growth. At the relevant dopant levels (~10 20 cm -3 ) lifetimes of the 4 I 13/2 level as high as 7 ms have been measured. Gain measurements have been carried out over 6.4-cm propagation length in a 700-nm-thick Erdoped Al 2 O 3 waveguide. Net optical gain has been obtained over a 35-nm-wide wavelength range (1525-1560 nm) with a maximum of 4.9 dB.

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Optimization of Low-Loss Al2O3 Waveguide Fabrication for Application in Active Integrated Optical Devices

Cited by 12 publications

References 15 publications

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Rare-earth ion doped Al₂O₃ for active integrated photonics

Optimization of Al 2 O 3 :Er3⁺waveguide technology for active integrated optical devices

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Optimization of Low-Loss Al2O3 Waveguide Fabrication for Application in Active Integrated Optical Devices

Cited by 12 publications

References 15 publications

Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active–Passive Platform

Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active–Passive Platform

Rare-earth ion doped Al2O3 for active integrated photonics

Optimization of Al 2 O 3 :Er3+waveguide technology for active integrated optical devices

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Product

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About

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Monolithic Integration of Al₂O₃ and Si₃N₄ Toward Double-Layer Active–Passive Platform

Rare-earth ion doped Al₂O₃ for active integrated photonics

Optimization of Al 2 O 3 :Er3⁺waveguide technology for active integrated optical devices