Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

Khoshsirat, Nima; Ali, Fawad; Tiong, Vincent Tiing; Amjadipour, Mojtaba; Wang, Hongxia; Shafiei, Mahnaz; Motta, Nunzio

doi:10.3762/bjnano.9.252

Cited by 8 publications

(4 citation statements)

References 45 publications

(37 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, several studies have demonstrated that diffusion occurred between the STS substrate more precisely the steel components (Fe, Cr, Mn, etc.) and the CIGS layer [11,12]. The resistivity values obtained from CIGS layers deposited on glass substrates are in the same range as those reported by Mansour et al [13].…”

Section: Resultssupporting

confidence: 83%

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Kouhlane

Bouhafs

Nwadiaru

et al. 2022

JSMPM

View full text Add to dashboard Cite

OPAL2 calculator has proved to be an effective technique for simulating optical losses in various materials for various applications. This study demonstrates the use of this softwareto simulate the transmittance (T) and reflectance (R) and hence evaluate the optical properties of flash evaporated CuIn1-xGaxSe2(CIGS) thin films with a ratio x = 0.28 deposited on stainless-steel (STS) and glass substrates. The simulation results exhibit excellent accuracy of the modeled design presented in this work. The CIGS with a ratio of gallium x = 0.3 showed the best matching between simulated and experimental T and R patterns. Moreover, the simulation shows that an increase in the gallium concentration increases optical losses. Finally, the results demonstrate the application of the freeware program OPAL2 to practically simulate the optical proprieties of CIGS thin films.

show abstract

Section: Resultssupporting

confidence: 83%

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Kouhlane

Bouhafs

Nwadiaru

et al. 2022

JSMPM

View full text Add to dashboard Cite

show abstract

“…The decrease in reflectance always relates to the increase in surface roughness. 28 The diffuse reflectance of A−F is higher than that of the A−R sample, which indicates that a flatter CZTSe film can be obtained from the precursors with the incorporation of the Cu−Ge layer. For the previous research, the Ge−Se phase will turn into a liquid phase at 380 °C, which could assist grain growth and improve the film quality.…”

Section: Resultsmentioning

confidence: 94%

“…Meanwhile, the UV–Vis/DRS data are shown in Figure S4. The decrease in reflectance always relates to the increase in surface roughness . The diffuse reflectance of A–F is higher than that of the A–R sample, which indicates that a flatter CZTSe film can be obtained from the precursors with the incorporation of the Cu–Ge layer.…”

Section: Resultsmentioning

confidence: 94%

Investigation on the Structure and Morphology of CZTSe Solar Cells by Adjusting Cu–Ge Buffer Layers

Han

Zhang

et al. 2021

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

Electrodeposition has been regarded as a promising way to fabricate Cu2ZnSnSe4 (CZTSe) absorber layers because of the environmental friendliness and low-cost energy consumption. However, the electrodeposited copper (Cu) always forms “dendritic-like” clusters, which greatly influences the morphology of the CZTSe absorber layer and the efficiency of CZTSe solar cells. In this work, a uniform Cu thin film obtained through predepositing a thin Cu–Ge contacting layer on the molybdenum (Mo) substrate induces homogeneous electrodeposition of the Cu layer. Then, high-quality CZTSe films with low surface roughness (R a) are successfully fabricated. The difference between the activation energy (E a) and band gap (E g) has decreased from 0.21 to 0.09 eV, which means that the additional recombination process has reduced. The V oc-deficit also decreases by about 42 mV. Consequently, the efficiency of the device increased from 6.75 to 9.54% after introducing the contacting layer. This study suggests that a functional Cu–Ge contacting layer is important to form a high-quality CZTSe thin film, which provides a solid reference for the preparation of CZTSe thin films or/and other available semiconductor thin films via the electrodeposition method.

show abstract

“…The deposition of a good ohmic-contact can reduce interface carrier recombination.Thin CuInGeSe or CuZnSnS layer could fail to maintain the high efficiency performance. The main reason behind the poor performance was the substantial drop in short-circuit current density [20][21][22]. The Kesterite photovoltaics that applied for Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 , and Cu 2 ZnSn(S 1−x Se x ) 4 emerged as one of the most assured replacements for the chalcopyrite solar cells.…”

mentioning

confidence: 99%

Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

Tseng

Chang

et al. 2020

Nanomaterials

View full text Add to dashboard Cite

This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

show abstract

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

Cited by 8 publications

References 45 publications

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Investigation on the Structure and Morphology of CZTSe Solar Cells by Adjusting Cu–Ge Buffer Layers

Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

Contact Info

Product

Resources

About