Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes

Pitts, O.J.; Hisko, M.; Benyon, W.; Raymond, S.; SpringThorpe, A. J.

doi:10.1016/j.jcrysgro.2013.09.053

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…The electrical simulations of the device are performed using Synopsys TCAD commercial software. Doping values measured with the SIMS method given in [21] were used for Zn diffusion, charge, and grading regions. As for the lateral doping profile, the Zn diffusion edge curvature of the simulated device was adjusted to match approximately the curvature seen on the SEM images of the device cross-section from [17].…”

Section: B Device Simulationsmentioning

confidence: 99%

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Kizilkan

Karaca

Pešic

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 µm diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300K and 225K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/µm 2 and it decreases to 5 cps/µm 2 at 225K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).

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Section: B Device Simulationsmentioning

confidence: 99%

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Kizilkan

Karaca

Pešic

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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“…Therefore, the use of a diffusion process to introduce the selective area doping is more suitable, which is also less damaging to the T2SL structure and less expensive compared to ion-implantation. Although the planar photodetectors based on HgCdTe, InP, InAsSb, InSb and GeSn bulk materials have been reported before, few T2SLs-based planar devices have been demonstrated [22][23][24][25][26][27][28][29]. These T2SLs-based planar photodetectors showed promising performance results but still need to be further improved [30][31][32].…”

Section: Introductionmentioning

confidence: 99%

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Saroj

Slivken

et al. 2022

Photonics

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In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0 × 10−5 A/cm2 and the R0A value of ~3.0 × 102 Ω∙cm2 under −20 mV, which yielded a specific detectivity of 4.0 × 1011 cm·Hz1/2/W at 3.7 μm. At 150 K, the planar device showed a dark current density of 6.4 × 10−5 A/cm2 and a quantum efficiency of 49% at ~3.7 μm under −20 mV, which yielded a specific detectivity of 2.0 × 1011 cm·Hz1/2/W.

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“…[ 5,6 ] It has been proven that planar InGaAs/InP APDs exhibited lower leakage current, higher stability, and higher reliability compared with mesa‐type ones. [ 7–9 ] Selective‐area zinc diffusion technique has been thus developed as an effective way to obtain p‐type InP layers for planar InGaAs/InP APDs. There were several methods to realize selective‐area zinc diffusion in InP layers, mainly including chamber diffusion by metal‐organic chemical vapor deposition (MOCVD) using dimethylzinc (DMZn) or diethylzinc (DEZn) as the p‐type dopant [ 10,11 ] and furnace diffusion with ZnP 2 or Zn 3 P 2 in a sealed or semiclosed or open quartz ampoule.…”

Section: Introductionmentioning

confidence: 99%

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

Chen

Zhang

Miao

et al. 2021

Physica Status Solidi (a)

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Herein, an alternative approach of selective‐area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p‐type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective‐area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near‐infrared back‐illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high‐performance planar InGaAs/InP APD focal plane arrays.

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Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes

Cited by 10 publications

References 14 publications

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE

Optimized Selective‐Area p‐Type Diffusion for the Back‐Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

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