Optimization of p-emitter/n-buffer using laser annealing technique in IGBT design

Zhu, Cancan; Deviny, Ian; Yu, Boquan; Coulbeck, L.; Liu, Gary; Thomson, J.

doi:10.1109/iecon.2013.6699291

Cited by 3 publications

(5 citation statements)

References 5 publications

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“…The detailed assembly process can be found in [7]. Static and dynamic performances of new designed chips are summarized and compared with NPT chips as shown in Table 1 and Table 2, respectively.…”

Section: Device Performance Using Optimized Designmentioning

confidence: 99%

“…IGBTs having three different types of n-buffer layer (standard, high and higher N bf ) were fabricated in Dynex 1700V planar gate IGBT production line. The detail fabrication processes have been presented in [7]. After the processes were finished, the wafers were diced and functional chips were assembled at substrate or module levels for characterization and investigation.…”

Section: Device Failure Phenomenonmentioning

confidence: 99%

“…It offers free design of the injection efficiency of back p-emitter/n-buffer junction. [7] Increasing doping concentration (N bf ) of n-buffer layer can minimize n-base thickness to reduce on-state loss while maintaining the desirable blocking voltage. In particular, increasing N bf with suitable p-emitter design can depress the hole current through p-well to improve the control capability of MOSFET gate, and therefore, to reduce switching losses by controlling the gain of PNP transistor.…”

Section: Introductionmentioning

confidence: 99%

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Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer

Zhu

Deviny

Liu

et al. 2014

IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society

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Modern IGBT structure with a highly doped buffer layer showed a MOSFET-like behavior at low collectoremitter voltage when the gate was fully turned-on. This significantly increased the conduction loss and resulted in scrap chips. Its failure mechanism has been systematically studied in this paper to reveal the underlying device physics inside the IGBT microstructure using energy-band theory, numerical simulation and equivalent circuit methods. It is reported that both tunneling current and low injection efficiency of highly doped p-emitter/n-buffer junction are root causes, and the latter deactivates the bipolar function, so that the device is dominated by MOSFET action only under low collector-emitter voltage condition. The paper will be concluded by presenting excellent measured performances of IGBTs using optimized p-emitter/nbuffer junction.

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Section: Device Performance Using Optimized Designmentioning

confidence: 99%

Section: Device Failure Phenomenonmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer

Zhu

Deviny

Liu

et al. 2014

IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society

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“…Alternatively, in order to further improve image quality, those multiple images can be integrated into one image. In this study, not just simply averaging multiple frequency images obtained by the SCM-weighted SA, we propose a new method called SCM-weighted SA-SCM, which has been briefly introduced in our conference paper 26) and is discussed in detail in this paper including further progress. In the SCM-weighted SA-SCM, the SCM processing is applied again to the image lines of the multiple frequency images from the SCM-weighted SA.…”

Section: Introductionmentioning

confidence: 99%

High resolution ultrasonic imaging based on frequency sweep in both of transducer element domain and imaging line domain

Zhu

Tagawa

2019

Jpn. J. Appl. Phys.

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We developed the super resolution FM-chirp correlation method (SCM) and its high frame rate version called synthetic aperture-SCM (SA-SCM) based on frequency sweep in order to improve the range resolution in ultrasound imaging. However, in these methods, discontinuities in the lateral direction tend to occur, because the SCM processing is performed line by line in the image. In addition, in array transducers, grating lobes are more likely to occur when the spatial resolution is increased using high-frequencies. Therefore, another version called SCM-weighted SA was proposed. In the SCM-weighted SA, in order to avoid the lateral discontinuities, first the SCM processing is performed on each echo received by each transducer element, and then the obtained SCM result is used as a weight for SA processing. The SCM-weighted SA can generate multiple B-mode images each of which corresponds to each carrier frequency, and the appropriate low frequency images among them have no grating lobes. While this plurality of B-mode images can be used as multi-frequency images, it can also be integrated as one high SNR image. In the present study, we propose a method to generate the integrated one B-mode image by applying SCM again in the line direction of the obtained multi-frequency images, which is called SCM-weighted SA-SCM. This method can further improve the range resolution.

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“…Compared to the first and second generation of NPT IGBTs, the device performance using the latest thin film technology has been improved by introducing various doping concentrations in the carrier storage region (CSR), which is also known as SPT technology [3] or field stop concept [4]. It combines the advantages of the first two generations, on the basis of which further generations have evolved [5][6][7]. Different doping profiles have significant effects on the voltage-current characteristics of NPT IGBTs, which can be thoroughly studied by proper estimation of doping concentration in the effective base region (CSR) of IGBT.…”

Section: Introductionmentioning

confidence: 99%

Transient anode voltage modeling of IGBT and its base doping profile investigation

Das

Khan

2015

2015 18th International Conference on Computer and Information Technology (ICCIT)

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This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICCITechn.2015.7488054In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through investigation into transient anode voltage modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for derivation of minority carrier concentration within the base. With the derived expression, an analytical model has been developed for turn-off anode voltage of IGBT in all doping profile conditions. Better agreements with the experimental results have been found compared to the previously used linear model. Finally, the implications of base doping dependence on the anode voltage are discussed, including implementation of such a doping concentration estimation techniqu

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Optimization of p-emitter/n-buffer using laser annealing technique in IGBT design

Cited by 3 publications

References 5 publications

Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer

Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer

High resolution ultrasonic imaging based on frequency sweep in both of transducer element domain and imaging line domain

Transient anode voltage modeling of IGBT and its base doping profile investigation

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