The resist 'pattern formation' characteristics of the methacryl-based, polyhydroxystyrene (PHS)-based and hybrid (methacryl-PHS) extreme ultraviolet (EUV) resists were investigated using a high speed atomic force microscope. This analysis covers the dissolution or development, rinse and drying processes that are conventionally applied after EUV exposure and post exposure bake. As a result, the behavior of resist patterns exposed in these resist platforms during development, rinse and drying were visually defined. These results have also shown how the hydrophobicity or hydrophilicity of the resist resin will affect resist pattern critical dimension variations and pattern shape during the development and rinse stages but that during the drying process, the escape of absorbed water in the resist pattern will reduce pattern size and change the pattern shape.