The dielectric constant of polymer ferroelectric dielectrics may be tuned by changing the temperature, offering a platform for monitoring changes in interfacial transport with the polarization strength in organic field-effect transistors (FETs). Temperature dependent transport studies of FETs have been carried out from a solution-processed organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), using both ferroelectric and nonferroelectric gate insulators. Non-ferroelectric dielectric based TIPS-pentacene FETs show a clear activated transport in contrast to the ferroelectric dielectric polymer, poly(vinylidene fluoridetrifluoroethylene) (PVDF-TrFE), where a negative temperature coefficient of the mobility is observed in the ferroelectric temperature range. The current-voltage (I-V) characteristics from TIPSpentacene diodes signal a space-charge-limited conduction (SCLC) for a discrete set of trap levels, suggesting that charge injection and transport occurs through regions of ordering in the semiconductor. The carrier mobility extracted from temperature-dependent I-V characteristics from the trap-free SCLC region shows a negative coefficient beyond 200 K, similar to the trend observed in FETs with the ferroelectric dielectric. At moderate temperatures, the polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the nature of traps results in an effective de-trapping of the shallow trap states into more mobile states in TIPS-pentacene.