Optimization of Se layer thickness in Mo/CuGa/In/Se precursor for the formation of Cu(InGa)Se2 by rapid thermal annealing

Control of Se layer thickness in two-step selenization and sulfurization of CuGa/In/Se precursors

“…Then, Se was coated without heating sample in a vacuum evaporator [ $ 10 À 6 Torr ( $ 1.33 mPa)], where the Se thickness was varied from 0.5 to 1.5 μm in 0.5-μm increments. A detailed description of the metal sputtering and Se evaporation procedures was reported in our previous paper [7]. Glass/Mo/CuGa/In/Se precursors were selenized in a tube-type rapid thermal process system.…”

“…The process temperature and time were fixed at 570°C and 10 min at a ramp rate of 4°C/s, respectively. A schematic drawing of our RTP system and details of its operation can also be found elsewhere [7]. Selenized samples were then sulfurized at 600°C by a 4 mol% H 2 S/He gas mixture for 5 min in the identical RTP system.…”

“…It was also reported that Ga depth uniformity could be controlled by adjusting selenization and sulfurization processes [4][5][6]. In our previous report [7], we reported that the rapid thermal process (RTP) of CuGa/In/Se precursor has a potential to reduce Ga segregation compared to conventional selenization process, by investigating detailed selenization pathways using in-situ high-temperature X-ray diffraction analysis. In this study, the thickness of Se layer in the CuGa/In/Se precursor was varied from 0.5 to 1.5 μm in order to control the degree of selenization at a given selenization time and temperature.…”

Rapid synthesis of CuInSe 2 from sputter-deposited bilayer In 2 Se 3 /Cu 2 Se precursors

“…During the RTA process, the temperature ramp rate was set to 4°C/s, and Se vapor was supplied by the evaporation of Se coated onto the quartz cover. The schematic diagrams of our RTA system and customized sample tray were provided in our previous paper [9].…”

Formation of a Mo2N skin layer in columnar-structural Mo films using NH3 plasma nitridation as the Se diffusion-barrier layer

“…On the other hand, absorber growth under high temperature conditions and Se-environments causes the rapid diffusion of Se into the Mo electrode, which results in the formation of a MoSe 2 layer between the CIGS and Mo electrode. A thick MoSe 2 layer exhibits high resistivity (10 1 -10 4 Ω·cm) and volume expansion of Mo because of the formation of MoSe 2 , which can deteriorate the contact properties between CIGS and the Mo electrode [10][11][12][13][14]. Therefore, the formation of MoSe 2 is one of main reasons to decrease the efficiency of solar cells.…”