Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach

Abstract

A new optimal predictive model of ion-implanted Si d-MESFETs with improved performance is proposed. We demonstrate quantitatively that Pearson's higher moments have a major influence on the device performance. An enhancement in the drain± source current is reported. Reduction of the threshold voltage is also established when compared with the gaussian approach. The closer agreement with the experimental data confirms the validity of this model. Nomenclaturex direction along which ions are implanted X dg distance from surface to edge of gate depletion region in the channel X ds distance from surface to edge of substrate depth region in the channel X p distance from surface to channel potential minimum X pm maximum value of X p in the above threshold condition with V p = 0 Z channel width b implant kurtosis parameter D depth of Fermi level below the conduction band in the undepleted channel ² permittivity of the semiconductor u B metal semiconductor work function difference G implant skewness parameter ¹ carrier mobility s implant straggle parameter