2016
DOI: 10.1016/j.radphyschem.2016.04.012
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Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

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Cited by 32 publications
(14 citation statements)
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“…1) the optimization of planar coupling configuration using analytical and numerical methods was attempted with metal tritides and SiC (transducer), promethium‐147 ( 147 Pm) and SiC (transducer), and nickel‐63 ( 63 Ni) and 147 Pm with various semiconductor converters . Rahmani et al, Kim et al, and Wu et al used a combination of closed form equations and Monte Carlo simulations to maximize nuclear and electrical power output based on a defined domain (i.e., radioisotope source layer thicknesses and dopant concentrations of the semiconductor junctions). However, η was never maximized nor prioritized in these publications …”
Section: Introductionmentioning
confidence: 99%
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“…1) the optimization of planar coupling configuration using analytical and numerical methods was attempted with metal tritides and SiC (transducer), promethium‐147 ( 147 Pm) and SiC (transducer), and nickel‐63 ( 63 Ni) and 147 Pm with various semiconductor converters . Rahmani et al, Kim et al, and Wu et al used a combination of closed form equations and Monte Carlo simulations to maximize nuclear and electrical power output based on a defined domain (i.e., radioisotope source layer thicknesses and dopant concentrations of the semiconductor junctions). However, η was never maximized nor prioritized in these publications …”
Section: Introductionmentioning
confidence: 99%
“…Rahmani et al, Kim et al, and Wu et al used a combination of closed form equations and Monte Carlo simulations to maximize nuclear and electrical power output based on a defined domain (i.e., radioisotope source layer thicknesses and dopant concentrations of the semiconductor junctions). However, η was never maximized nor prioritized in these publications …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The penetration depth of incident β-particles should match the absorbing material’s depletion width. EHPs generated inside the depletion region have a higher probability of accumulating and contributing to the ECE of the betavoltaic battery. , Therefore, the performance of the device will increase as the majority of radiation energy will be converted into electrical energy by the semiconductor. In the case of a mismatch between these two dimensions, the ECE of the device is reduced …”
Section: Insight Into Betavoltaic Batterymentioning
confidence: 99%
“…Rahmani et al theoretically analyzed two types of Si-based betavoltaic structures, consisting of a p–n junction and Schottky junction . Their study used Monte Carlo simulations to tune parameters, such as doping concentration and thickness of the semiconductor region.…”
Section: Materials For the Betavoltaic Batteriesmentioning
confidence: 99%