Optimization of sublimation growth of SiC bulk crystals using modeling

Мохов, Е. Н.; Demina, S.E.; Ramm, M.G.; Роенков, А. Д.; Vodakov, Yu. A.; Segal, A.S.; Vorob'ev, A. N.; Karpov, S. Yu.; Kulik, A.V.; Makarov, Yu.N.

doi:10.1016/s0921-5107(98)00456-5

Cited by 35 publications

(20 citation statements)

References 1 publication

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“…The rate of graphite erosion reduces as the distance from the growing crystal increases. This effect was also predicted by numerical modeling [33]. It seems unlikely that the returning silicon vapor can reach the source surface again because it must overcome the viscose vapor flow in the opposite direction.…”

Section: Vapor Stoichiometrysupporting

confidence: 64%

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Tupitsyn

Arulchakkaravarthi

Drachev

et al. 2007

Journal of Crystal Growth

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Section: Vapor Stoichiometrysupporting

confidence: 64%

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Tupitsyn

Arulchakkaravarthi

Drachev

et al. 2007

Journal of Crystal Growth

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“…In the sublimation technique, modifying the crucible geometry is a conventional way to control the temperature distribution inside the crucible [8]. It includes not only searching for the optimum shape and thickness of the crucible walls but also an artificially non-uniform thermal insulation of the crucible from the other parts of the growth system.…”

Section: Thermal Field Control By a Crucible Designmentioning

confidence: 99%

“…Therefore, growers try to hold on a slightly convex surface profile during the entire growth run. However, this is a complicated task because the growth rate distribution over the seed is controlled not only by the instant thermal field in the crucible and respective powder sublimation rate but also by the heterogeneous chemical processes occurring on the crucible walls [8].…”

Section: Crystal Shape Control During the Growthmentioning

confidence: 99%

Advances in modeling of wide‐bandgap bulk crystal growth

Богданов¹,

Demina²,

Karpov³

et al. 2003

Cryst. Res. Technol.

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. Pn, 81.05.Rm, 72.80.Ey We review key aspects of sublimation growth of wide-bandgap semiconductors like SiC, AlN and GaN, and show how modeling can help to solve a number of practical problems. As the temperature distribution in the growth chamber is the most critical factor in the sublimation technology, we discuss in detail specific features of heat transfer with the focus on the porous materials normally involved in the growth system: powder source, thermal insulation, and graphite. The species transport is simulated using advanced models accounting for a multicomponent vapor and the kinetics of chemical interaction of nitrogen-containing species with the surface of group-III nitrides. The effect of growth conditions on parasitic phase formation is analyzed. To optimize the growth system design and operating conditions, we suggest an inverse-problem approach instead of commonly used trial-and-error methods. This simulation procedure has proved quite efficient for getting design solutions, which could hardly be found by conventional straightforward methods. In particular, we demonstrate the effectiveness of the inverse modeling for finding the growth conditions, which provide crystals of desired shapes. A special analysis is made to establish a correlation between the growth conditions and defect distribution in the grown crystal, with the focus on thermoelastic stress produced by temperature gradients. The high-temperature dynamics of gliding dislocations and consequent plastic stress relaxation in the material is examined. The prospective of global modeling of wide-bandgap crystal growth by sublimation and still open questions are discussed.

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“…In the present calculation, three main species, Si, Si 2 C and SiC 2 [10,13,14], with carried argon gas are taken in the gas part for the sublimation and deposition process. It is assumed that there are no homogeneous chemical reactions in the vapor phase.…”

Section: Boundary Conditions For Mass Transfermentioning

confidence: 99%

“…We therefore developed a set of analysis systems that includes almost all of the effects in heat and mass transport processes, such as compressible effect, convection effect, buoyancy effect, flow coupling of argon gas and species, and the Stefan effect. This solver does not assume a perfect stoichiometric incorporation of Si and C atoms into the growing crystal as performed elsewhere [4,9,10,[13][14][15] and also does not assume thermodynamic equilibrium chemical reactions at crystal and source surfaces as carried out elsewhere [4,15]. The evaporation and deposition flux is automatically provided according to the supersaturation of species at the seed or supercooling at the powder source.…”

Section: Introductionmentioning

confidence: 99%