Optimization of synthesis conditions of thin Te-doped InSb films and first principles studies of their physicochemical properties

Study of Se/Te-doped Cu2O as a hole transport material in perovskite solar cells

“…There was only one obvious peak for Se 3d, and its binding energy position was about 54.56 eV, which was Se 4+ . The peak positions of the four elements, Cu, O, Se, and Te were basically consistent with those previously reported in the literature 10,[22][23][24]. Fig.6shows the EDS spectra of the Te : Cu2 O and Se/Te : Cu 2 O thin lms.…”

“…The peak positions of the four elements, Cu, O, Se, and Te were basically consistent with those previously reported in the literature. 10,[22][23][24] Fig. 6 shows the EDS spectra of the Te : Cu Fig.…”

Electrochemistry of Thin Films and Nanostructured Materials

“…Chemical vapor deposition (CVD) techniques are frequently used to obtain thin films from a variety of materials. Various CVDs also use organometallic precursors (MOCVD) [22,28], atomic layer deposition (ALD) [29], and electrodeposition [30][31][32][33][34].…”

Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity

“…[7][8][9][10][11][12][13] In particular, InSb NWs are very promising for use in FET devices, which are pivotal to modern Si-based semiconductor technologies, due to their narrow band gap (∼0.17 eV), large absolute value of the g factor (∼51) and huge exciton Bohr radius (∼61 nm). [14][15][16][17] InSb NWs have been synthesized by several groups via the VLS mechanism such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD) and metal organic vapor phase epitaxy (MOVPE). [18][19][20] It is proved that the appropriate crystal structures and suitable aspect ratios of InSb NWs can bring significant improvements in the electrical transport properties of NW-based FETs.…”