Optimization of Te Solution Chemistry in the Electrochemical Atomic Layer Deposition Growth of CdTe

Perdue, Brian; Anthony, Julie; Stickney, John L.

doi:10.1149/2.013407jes

Cited by 8 publications

(9 citation statements)

References 47 publications

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“…30,31 Making of CIGS and CdS thin films by electrodeposition could have larger advantages over other methods, such as low instrumental and apparatus simplicity, low materials cost and efficient utilization of raw materials, low power/energy consumption, high deposition speed, and large area application which are suitable for bulk industrial production. [34][35][36] Performing a series of alternate cycles of the atomic layer deposits by E-ALD may form the materials with preferred thickness and quality, saving resource materials as well as controlling the properties of materials at the atomic level. 33 The E-ALD which was developed by Gregory and Stickney, can be performed in solution phase by the principle of SLRs.…”

Section: Introductionmentioning

confidence: 99%

“…7,32 ALD is well-known for the layer-by-layer growth of materials by surface limited reactions (SLRs) in vacuum or gas phase. A variety of semiconductor materials have been successfully deposited by this E-ALD technique, which include CdTe, [36][37][38] CdSe, 38 ZnS, 10 CdS, 10,38-42 CIS, 43,44 and CIGS. 34,35 The SLRs in electrodeposition is based on underpotential deposition (UPD), where the deposition of monolayer takes place under or less than the Nernst potential; where the free energy formation of a surface compound leads to the formation of surface atomic layer.…”

Section: Introductionmentioning

confidence: 99%

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Mo/CIGS/CdS Structures by E‐ALD

Ramasamy

Jung

Yeon

et al. 2019

Bulletin Korean Chem Soc

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The chalcopyrite CuIn (1-x) Ga x Se 2 (CIGS) thin films and their cadmium sulfide (CdS) window layer structures (CIGS/CdS) were grown on Mo foil substrate in layer-by-layer fashion by electrochemical atomic layer deposition (E-ALD) and were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and photoelectrochemical (PEC) activity. XRD shows distinct pattern changes from chalcopyrite to chalcopyrite plus CdS structures upon adding E-ALD CdS layer to CIGS layers on Mo substrate. SEM shows that uniform and homogeneously distributed nanoparticles of CdS formed on top of CIGS layers, and EDS shows the successful preparation of CIGS/CdS structures with good atomic ratios in each layer. PEC performance reveals that bare CIGS films were of p-type conductivity but that CIGS/CdS structures n-type with p-type response near null.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mo/CIGS/CdS Structures by E‐ALD

Ramasamy

Jung

Yeon

et al. 2019

Bulletin Korean Chem Soc

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“…A handful of semiconductor compounds have been synthesized by E‐ALD techniques, including CIS and CIGS . Wang et al .…”

Section: Introductionmentioning

confidence: 99%

“…The deposition can be also performed as p number of cycles of a certain compound (for example, InSe) and alternate q number of cycles of another compound (for example, Cu 2 Se), called superlattice program, and this process can be repeated to produce the target quantity film. [22][23][24] A handful of semiconductor compounds [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] have been synthesized by E-ALD techniques, including CIS 33,34 and CIGS. 35,36 Wang et al have deposited CIS on a flexible, carboxyl-functionalized multi-walled carbon nanotube/polyimide (COOH-MWCNT/PI) nanocomposite membrane 33 and Stickney et al have reported CIS on Au surfaces.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Atomic Layer Deposition of CuInSe₂ on Au Surface

Jung

Ramasamy

Yeon

et al. 2019

Bulletin Korean Chem Soc

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CuInSe2 (CIS) thin film growth on Au/glass slide surface was investigated by electrochemical atomic layer deposition (E‐ALD) in superlattice sequence in ambient laboratory conditions without any heat treatment processes involved. The electrochemical behavior of Cu, In, and Se on the Au surface was surveyed, the underpotential deposition phenomena of In was demonstrated for the first time and a various set of potentials for the three elements were considered to fabricate thin CIS films by specific superlattice sequencing. The crystal structure, elemental composition, topography, and photoelectrochemical behavior of each film produced were evaluated with the aim of finding a new set of conditions for producing stoichiometric CIS films. A good stoichiometric film of Cu0.99In0.98Se2.00 was successfully prepared by applying 50 periods of the superlattice sequence of 3(In aSe b) + 1(Cu cSe d) with the new deposition potentials of 0.08, −0.55, and −0.05 V for Cu, In, and Se precursor solutions, respectively. The resulting E‐ALD film was found to exhibit a p‐type semiconductivity.

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“…The Stickney group has been working on the electrodeposition of semiconductors for the better of two decades, and has led the development of electrochemical of atomic layer deposition (E-ALD) [18][19][20][21][22][23][24][25] .…”

Section: Introductionmentioning

confidence: 99%

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

Shen

Zhang

Mubeen

et al. 2019

Electrochimica Acta

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Cadmium sulfide (CdS) is a preferred heterojunction partner for a number of chalcogenide-based solar cells. In view of this, interest has grown in the use of solution-based deposition techniques as an alternative route for the preparation of uniform ultrathin films of CdS. However, the quality of the electrodeposited CdS films on indium-tin oxide (ITO) remains far from optimal. This is because the ITO surface is electrochemically heterogeneous due to the presence of indium oxide; nucleation and further electrodeposition of CdS does not transpire on the oxided sites. Hence, only coarse-grained coatings, instead of homogeneous ultrathin films, are generated at un-pretreated ITO surfaces. In the present study, a mitigation of the amount of interfacial In oxide was attempted in order to increase the nucleation-site (indium-metal site) density. The procedure consisted of two steps: (i) Mild electrochemical reduction of the ITO to convert surface In(III) to In(0), followed by (ii) surface-limited redox replacement (SLRR) of In(0) by Cu via an aqueous solution of Cu 2+. This procedure resulted in the formation of a high density of oxide-free Cu on which CdS nuclei would form; the thickness was such that optical transparency was largely undiminished. A tenfold increase in CdS site density was observed, and that permitted the epitaxial growth of a second semiconductor, CdTe, atop the CdS film. The influences of applied potential and deposition time on nucleation-site sizes and densities were also studied.

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Optimization of Te Solution Chemistry in the Electrochemical Atomic Layer Deposition Growth of CdTe

Cited by 8 publications

References 47 publications

Mo/CIGS/CdS Structures by E‐ALD

Mo/CIGS/CdS Structures by E‐ALD

Electrochemical Atomic Layer Deposition of CuInSe₂ on Au Surface

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

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Optimization of Te Solution Chemistry in the Electrochemical Atomic Layer Deposition Growth of CdTe

Cited by 8 publications

References 47 publications

Mo/CIGS/CdS Structures by E‐ALD

Mo/CIGS/CdS Structures by E‐ALD

Electrochemical Atomic Layer Deposition of CuInSe2 on Au Surface

Optimization of the nucleation-site density for the electrodeposition of cadmium sulfide on indium-tin-oxide

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Electrochemical Atomic Layer Deposition of CuInSe₂ on Au Surface