2004
DOI: 10.1023/b:japs.0000049639.56456.b6
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Optimization of the CdS Buffer Layer in Effective Solar Cells Based on Cu(In,Ga)Se2

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Cited by 7 publications
(6 citation statements)
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“…It can be seen that the coefficient of induced photopleochroism depends only slightly on the photon energy and is extremely small in the entire range of photosensitivity. The value of this coefficient is about two times smaller than what is expected from the theory [19], We can state that the established trends of induced photopleochroism in the obtained TFHPs are indicative of the effect of interference-related bleaching of these photoelements in the entire spectral range of photoconversion as a result of deposition of thin ZnO films onto the outer plane of the CdS and ln 2 S 3 barrier layers [14,15), Evidently, the optimization of magnetron-assisted deposition of ZnO films would make it possible to increase the quantum efficiency of photoconversion in a TFHP, while the use of polarization photoelectric spectroscopy ensures the rapid monitoring of the processes of fonnation of antiretlection single-layer coatings from thin ZnO films,…”
Section: 3mentioning
confidence: 58%
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“…It can be seen that the coefficient of induced photopleochroism depends only slightly on the photon energy and is extremely small in the entire range of photosensitivity. The value of this coefficient is about two times smaller than what is expected from the theory [19], We can state that the established trends of induced photopleochroism in the obtained TFHPs are indicative of the effect of interference-related bleaching of these photoelements in the entire spectral range of photoconversion as a result of deposition of thin ZnO films onto the outer plane of the CdS and ln 2 S 3 barrier layers [14,15), Evidently, the optimization of magnetron-assisted deposition of ZnO films would make it possible to increase the quantum efficiency of photoconversion in a TFHP, while the use of polarization photoelectric spectroscopy ensures the rapid monitoring of the processes of fonnation of antiretlection single-layer coatings from thin ZnO films,…”
Section: 3mentioning
confidence: 58%
“…The Cu-In-Ga films were deposited using ion-plasma evaporation of the target of these metals in vacuum ( -6x I 0 --4 Pa) onto glass substrates ( either with a specially prepared surface or with a molybdenum sublayer) heated to I 00e° C. Heat treatment of the initial Cu-In-Ga films was carried out in the nitrogen inert atmosphere in the presence of selenium vapors in the temperature range of 250-520°C. Physicochemical studies showed that these conditions of heat treatment ensured the synthesis of a quaternary solid solution with chalcopyrite structure [12,13,14]. The duration of the process was chosen so as to satisfy the conditions for completion of the reaction of formation of homogeneous films of quaternary solid solution with the required composition.…”
Section: Resultsmentioning
confidence: 99%
“…In order to demonstrate more the correlations of the electrical and optical properties of the nanocrystals, we compare optical spectra of chemical bath deposited layers [11] and film multilayer structures with cubic CdS nanocrystals of the same size (100 nm), but with different ρ (Fig. 2).…”
Section: Films Structures With Cds Nanocrystalsmentioning
confidence: 99%
“…The substrates were kept at room temperature (RT) on a copper holder, and the vacuum pressure in the evaporation chamber was about 10 -6 Torr. Crystals and films produced in standard ways were used as reference samples [10][11][12][13]. After the growth some samples were γ-irradiated at RT [14].…”
mentioning
confidence: 99%
“…The sulfur concentration in the p-Cu(In,Ga)(S,Se) 2 films was control by the parameters of the sulfurization process. The barrier n-CdS films with a thickness of 40-50 nm were deposited onto the external surface of pCu(In,Ga)(S,Se) 2 films using the chemical bath deposition method [12].…”
mentioning
confidence: 99%