Optimization of the Growth Process of Double Perovskite Pr2−δNi1−xMn1+xO6−y Epitaxial Thin Films by RF Sputtering

Bernal-Salamanca, Monica; Balcells, Lluı́s; Konstantinović, Z.; Pomar, A.; Martı́nez, B.; Frontera, C.

doi:10.3390/ma15145046

Cited by 4 publications

(4 citation statements)

References 42 publications

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“…The present MC-MD model of sputtered particle transport is based on the following assumptions: (1) Sputtered particles are neutral atoms in the ground state [21]; (2) the sputtered particles only experience elastic collisions with background gas atoms due to their small concentration compared to that of background gas [22]; (3) The background gas is homogeneous and in thermal equilibrium at temperature Tg and pressure P. Based on these assumptions, the movement trajectory of a sputtered atom in the gas phase consists of a sequence of straight lines, which are ended by the elastic collisions with background gas atoms.…”

Section: Mc-md Simulation Methodsmentioning

confidence: 99%

“…Due to its higher productivity and lower manufacturing cost, magnetron sputtering deposition has been extensively applied to the fabrication of metal, semiconductor, optical, and composite films [1][2][3][4]. During magnetron sputtering deposition, film particles undergo a series of collisions with background gas atoms before they are ultimately deposited onto the substrate, i.e., particle transport process, which affects the incident energy and angular distributions [5,6] of sputtered particles as they strike the substrate, and thus influences the performance of the deposited film.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Target-Substrate Distance on the Transport Process of Sputtered Atoms: MC-MD Multiscale Coupling Simulation

Zhu

Xiao

et al. 2022

Materials

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A Monte Carlo (MC) and molecular dynamics (MD) coupling simulation scheme for sputtered particle transport was first proposed in this work. In this scheme, the MC method was utilized to model the free-flight process of sputtered atoms, while the MD model was adopted to simulate the collision between the sputtered atom and background gas atom so as to self-consistently calculate the post-collision velocity of the sputtered atom. The reliability of the MD collision model has been verified by comparing the computation results of the MD model and of an analytical model. This MC-MD coupling simulation scheme was used to investigate the influence of target-substrate distance on the transport characteristic parameters of sputtered Cu atoms during magnetron sputtering discharge. As the target-substrate distance increased from 30 to 150 mm, the peak energy of the incident energy distribution of deposited Cu atoms decreased from 2 to 1 eV due to the gradual thermalization of sputtered atoms. The distribution of differential deposition rate in unit solid angle firstly became more forward-peaked and then reversely approached the cosine distribution, which was agreed with the existing experimental observations. This work is expected to provide a more realistic simulation scheme for sputtered particle transport, which can be further combined with the MD simulation of sputtered film growth to explore the influence mechanism of process parameters on the properties of sputtered film.

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Section: Mc-md Simulation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Target-Substrate Distance on the Transport Process of Sputtered Atoms: MC-MD Multiscale Coupling Simulation

Zhu

Xiao

et al. 2022

Materials

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“…Additionally, the thermal stability of the prepared HfOxNy layer is investigated. The impact of various process parameters, including oxygen pressure, substrate temperature, and annealing treatment, on the structural, magnetic, and transport characteristics of thin films, as well as their stoichiometry, has been explored in the literature [ 12 , 13 , 14 ]. Additionally, ref.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Cu/Sn Alloy Sputtering Process Based on Orthogonal Experimental Design Method

Liu,

Li,

Hao

et al. 2023

Micromachines

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The performance of supercapacitors is directly influenced by the conductivity of polypyrrole, which serves as the electrode material. In order to balance considerations of cost-effectiveness and conductivity, this study employs magnetron sputtering to fabricate a copper–tin alloy layer as the conductive layer for polypyrrole. The deposition of a copper–tin alloy film through magnetron sputtering has a significant impact on the polymerization effect of pyrrole as well as being a crucial factor influencing the performance of supercapacitors. Various parameters, including working pressure, sputtering time, and sputtering power, affect the conductivity of the copper–tin alloy film. Furthermore, the degree of influence of each parameter on the conductivity of the copper–tin alloy film varies. This study utilizes an orthogonal experimental design to investigate the impact of various factors and levels on the conductivity and uniformity of a metal film. The objective is to optimize the process parameters for the creation of a copper–tin alloy film with desirable characteristics. Experimental results indicate that the working voltage, sputtering time, and sputtering power significantly influence the coefficient of variation, deposition rate, target current, and operating voltage of the film. Furthermore, FT-IR, XRD, and SEM tests are conducted on samples prepared using the identified optimal process parameters. In addition, we demonstrate various approaches to enhance the experiment’s reliability. The findings indicate that the most favorable process parameters for achieving optimal results are a working pressure of 0.065 Pa, a sputtering time of 20 min, and a sputtering power of 70 W. It was observed that the sputtering time significantly influences the uniformity of the copper–tin alloy film, whereas the sputtering power has a minimal impact on its uniformity. The deposition rate is primarily influenced by the working pressure, with the greatest effect observed. Conversely, the sputtering time has the least impact on the deposition rate. Similarly, the target current is predominantly affected by the sputtering power, exhibiting the greatest influence, while the sputtering time has the least effect. Furthermore, the working voltage is most significantly influenced by the working pressure, whereas the sputtering time has the least impact on the working voltage.

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“…Due to its high deposition rate and low manufacturing cost, magnetron sputtering has been widely employed to fabricate optical and electrical film devices [ 1 , 2 ]. The performance of sputtered film devices is significantly influenced by film uniformity [ 3 ], which is mainly determined by the parameters of target-substrate configuration [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment

et al. 2022

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The uniformity of magnetron-sputtered films can be evaluated using an analytical model whose key parameters, such as included angle cosine and distance between infinitesimal elements, are so far calculated based on targets-substrate geometric relation. This existing computation scheme is not applicable in a triple-target magnetron co-sputtering system with complex targets-substrate geometric relation. In this work, a computation method was proposed to calculate the deposition uniformity of a triple-target magnetron co-sputtering system based on the analytical model. In this method, the coordinates of the infinitesimal elements on the substrate and targets were calibrated in an identical global coordinate system via coordinate transformation, such that the key parameters of the analytical formula can be evaluated by vector computation. The effects of the target-substrate angle and target-substrate distance on the deposition uniformity of a given triple-target magnetron co-sputtering system were investigated via numerical simulation and experiment, respectively. Simulation results were consistent with experimental results. Relevant evolution mechanisms of the deposition uniformity of the co-sputtering system with the variations of target-substrate parameters were discussed in detail based on the simulation results. It is expected that this computation approach can be employed to provide theoretical guidance for the fast and economical fabrication of high-quality, large-area film and composite films.

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Optimization of the Growth Process of Double Perovskite Pr2−δNi1−xMn1+xO6−y Epitaxial Thin Films by RF Sputtering

Cited by 4 publications

References 42 publications

Influence of Target-Substrate Distance on the Transport Process of Sputtered Atoms: MC-MD Multiscale Coupling Simulation

Influence of Target-Substrate Distance on the Transport Process of Sputtered Atoms: MC-MD Multiscale Coupling Simulation

Optimization of Cu/Sn Alloy Sputtering Process Based on Orthogonal Experimental Design Method

Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment

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