Optimization of the Perovskite Solar Cell Design with Layer Thickness Engineering for Improving the Photovoltaic Response Using SCAPS-1D

Aliaghayee, Mehdi

doi:10.1007/s11664-022-10203-x

Cited by 27 publications

(3 citation statements)

References 70 publications

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“…Further, the enhancement in series resistance (R se ) for the thicker layer is also responsible for the performance reduction. [46] The thickness of the absorber layer must not exceed the carrier diffusion length of the material to attain the best performance. [47,48] We have varied the absorber layer thickness at different levels of CBOs and VBOs.…”

Section: Impact Of Thickness Variation On the Performance Of Cells At...mentioning

confidence: 99%

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study

et al. 2023

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A computational method using a unidimensional device simulator to theoretically study the CsSn0.5Ge0.5I3‐based perovskite solar cell (PSC) is adopted. The results provide a detailed understanding of energy level tuning between the transport and absorber layer in order to attain high‐performance parameters. The influence of band offset (BO) on the charge carrier dynamics of the PSCs is explained in terms of cliff and spike structures for various levels of conduction band offsets (CBOs) and valence band offsets (VBOs). The ideality factor (IF) is calculated with variable BOs, and its variation with the applied voltage is examined. IF value ranges from 1.95 to 1.55 and 1.57 to 1.51 for different levels of VBO and CBO, respectively. The study on absorber layer thickness is conducted at different levels of BOs, revealing the importance of optimized absorber thickness on the performance of the PSCs. The capacitance–voltage measurements under illumination and in the dark signify the importance of optimized BO on the built‐in potential and maximum capacitances of the PSC. The Nyquist plot of the PSC at different levels of BO reveals that the highest recombination resistance is obtained at the optimum BO levels, rendering device to attain superior performance.

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Section: Impact Of Thickness Variation On the Performance Of Cells At...mentioning

confidence: 99%

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study

et al. 2023

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“…Conventionally, the combination of TiO 2 (as ETL) and Spiro-OMeTAD (as HTL) has been the most preferred one for MAPbI 3 based PSCs [10]. High transmissivity and appropriate bandgap of TiO 2 make it suitable for highly functional PSCs and it has also been validated through simulations [11]. However, the requirement of high sintering temperature (∼500 °C), low electron mobility, limited stability and high cost of deposition limits the applicability of TiO 2 in large-area based flexible PSCs [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Performance and reproducibility analysis of zinc sulfo-selenide and cuprous oxide based perovskite solar cell: A SCAPS study

Patil,

Bhargava,

Pharne

2024

Phys. Scr.

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The combination of titanium dioxide (TiO2) as electron transport layer (ETL) and 2,2',7,7'-Tetrakis [N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD) as hole transport layer (HTL) have been frequently used in solution-processed perovskite solar cells (PSCs). However, the high sintering temperature required during the deposition of TiO2 layer and expensive Spiro-OMeTAD are limiting its commercial applicability. In this context, the combination of zinc sulfo-selenide (ZnS0.5Se0.5) (as ETL) which can be spray coated and inexpensive cuprous oxide (Cu2O) (as HTL) can serve as an alternative. This report computationally explores and compares the utility of the combination of ZnS0.5Se0.5 and Cu2O against that of TiO2 and Spiro-OMeTAD in terms of performance and reproducibility of MAPbI3 based PSC. The performance of optimized baseline models is quantitatively compared in terms of the values of performance metrics. Also, their performance is compared with respect to variations in bulk/interfacial defect density using the electrical and impedance spectroscopy characterizations. Further, their reproducibility is compared under variable carrier mobility of absorber layer. The optimized champion and mean power conversion efficiency of ZnS0.5Se0.5/Cu2O based cell are 25.6% and 25.3% respectively with standard deviation of 0.73% which is quite impressive and realistic when compared to the existing literature. The results obtained are quantitatively explained based on correlation between the cumulative effect of transit and recombination resistances evaluated using Nyquist profiles. The report systematically addresses the importance of ETL and HTL combination towards improving the performance and reproducibility of solution-processed PSCs.

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“…It is important to determine an optimized thickness of each layer before final analysis can be conducted, as emphasized in [9][10][11]. In this study, a rectangular typed Sagnac interferometer (RTSI) is utilized for phase shifting measurements of the multilayer thicknesses of Fluorine-doped tin oxide (FTO) substrate and the Material Transport layer (MTL), Nickel oxide, deposited on a glass substrate.…”

Section: Introductionmentioning

confidence: 99%

Polarization phase shifting for thickness measurement of NiO material transport layer using Sagnac interferometer

Usman,

Thonglim,

Bhatranand

et al. 2023

Applied Optical Metrology V

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The optical interferometric technique with polarization phase shifting has been realized as one of the most important techniques for optical non-contact measurements. However, the measurement of thin film thickness using field emission scanning electron microscopy (FE-SEM) or scanning electron microscopy (SEM) has been inconvenient due to the high cost of maintenance. This research aims to measure the thickness of the Hole Transport Material Nickel (II) oxide (NiO) layer deposited on a glass substrate (NiO/FTO layer) using phase shifting in a Sagnac interferometer. In the experimental setup, the signal is split into the FTO reference arm and the NiO/FTO sample arm using a nonpolarizing beam splitter. The split signals are then detected through a balanced photodetector. By analyzing the signal intensities at polarization settings ranging from 0° to 90°, the phase shift and thickness of the NiO layer can be determined. In this study, a NiO thickness value of 281.64 nm was successfully achieved. To evaluate the accuracy of the proposed measurement method, the percentage error between the proposed technique and the conventional SEM method was computed. The percentage error was found to be 0.23%. These results indicate that the proposed setup holds promise as a cost-effective alternative to SEM for measuring thin film thickness.

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Optimization of the Perovskite Solar Cell Design with Layer Thickness Engineering for Improving the Photovoltaic Response Using SCAPS-1D

Cited by 27 publications

References 70 publications

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study

Performance and reproducibility analysis of zinc sulfo-selenide and cuprous oxide based perovskite solar cell: A SCAPS study

Polarization phase shifting for thickness measurement of NiO material transport layer using Sagnac interferometer

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Optimization of the Perovskite Solar Cell Design with Layer Thickness Engineering for Improving the Photovoltaic Response Using SCAPS-1D

Cited by 27 publications

References 70 publications

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn0.5Ge0.5I3‐Based Perovskite Solar Cell: A Theoretical Study

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn0.5Ge0.5I3‐Based Perovskite Solar Cell: A Theoretical Study

Performance and reproducibility analysis of zinc sulfo-selenide and cuprous oxide based perovskite solar cell: A SCAPS study

Polarization phase shifting for thickness measurement of NiO material transport layer using Sagnac interferometer

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Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study

Revealing the Role of Band Offsets on the Charge Carrier Dynamics of CsSn_0.5Ge_0.5I₃‐Based Perovskite Solar Cell: A Theoretical Study