2018
DOI: 10.1007/s11082-018-1613-y
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Optimization of the two-stage common-emitter transistor amplifier for equalization circuit in visible light communication system

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Cited by 11 publications
(2 citation statements)
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“…The radio-frequency (RF) transistor BFP650, based on Silicon-Germanium: Carbon (SiGe:C) technology, is chosen for the amplifier circuit of the FE board considering its advantages (low cost, low power consumption, low noise and high speed, among others) [7,8]. A1 and A2 are both typical common-emitter RC coupled amplifier, as shown in figure 4, where 𝑅 𝐿 is the load resistance of the circuit [9,10]. Compared to the common-base and common-collector amplifiers, the common-emitter amplifier can achieve a larger voltage gain.…”
Section: Amplifiermentioning
confidence: 99%
“…The radio-frequency (RF) transistor BFP650, based on Silicon-Germanium: Carbon (SiGe:C) technology, is chosen for the amplifier circuit of the FE board considering its advantages (low cost, low power consumption, low noise and high speed, among others) [7,8]. A1 and A2 are both typical common-emitter RC coupled amplifier, as shown in figure 4, where 𝑅 𝐿 is the load resistance of the circuit [9,10]. Compared to the common-base and common-collector amplifiers, the common-emitter amplifier can achieve a larger voltage gain.…”
Section: Amplifiermentioning
confidence: 99%
“…It is a highly integrated, complete characterization for radio frequency and microwave impedance measurement solution. The embedded software installed in the E5080B enables complete device characterization for passive device and components for researcher [14]. This VNA package with an extra wide bandwidth of up to 152 dB dynamic range feature improves the RF component and system testing throughput.…”
Section: Selection Of Network Analyzermentioning
confidence: 99%