2010
DOI: 10.1016/j.jallcom.2010.07.121
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Optimization of thermoelectric properties of type-VIII clathrate Ba8Ga16Sn30 by carrier tuning

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Cited by 55 publications
(66 citation statements)
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“…Presence of doped Sb and high Ga content in the single crystal have been confirmed by EPMA analysis. According to the experimental results reported by Saiga et al, the maximum ZT values for both p-type BGS-VIII and BGSS-VIII are approximately 1.0 at around 450 K. 6) The carrier concentration of p-type BGS-VIII samples is 1.4 © 10 26 m ¹3 , but that of BGSS-VIII samples is unknown. The thermoelectric properties of a compound are strongly affected by its carrier concentration, so the effect of Sb substitution in BGS-VIII remains unclear.…”
Section: )mentioning
confidence: 95%
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“…Presence of doped Sb and high Ga content in the single crystal have been confirmed by EPMA analysis. According to the experimental results reported by Saiga et al, the maximum ZT values for both p-type BGS-VIII and BGSS-VIII are approximately 1.0 at around 450 K. 6) The carrier concentration of p-type BGS-VIII samples is 1.4 © 10 26 m ¹3 , but that of BGSS-VIII samples is unknown. The thermoelectric properties of a compound are strongly affected by its carrier concentration, so the effect of Sb substitution in BGS-VIII remains unclear.…”
Section: )mentioning
confidence: 95%
“…7,8) On the other hand, Sb-doped p-type BGS-VIII has high ZT value. 6,24) According to the Zintl concept for the clathrate, 25) electron carrier doping is realized by the partial substitution of Sb(5s 2 5p…”
Section: )mentioning
confidence: 99%
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“…Additionally, chemical reactions or mechanical moving parts are no longer needed. Many previous studies focused on the improvement of the inherent properties of thermoelectric materials [1][2][3][4][5] . However, the low conversion efficiency is still a distinct disadvantage [6][7][8][9] .…”
Section: Introductionmentioning
confidence: 99%