2012
DOI: 10.1109/jphotov.2011.2180514
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Optimization of ZnO Front Electrodes for High-Efficiency Micromorph Thin-Film Si Solar Cells

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Cited by 44 publications
(45 citation statements)
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“…It is obvious that the front TCO layer has to exhibit high transparency in the useful spectrum range and a sufficient conductivity to limit the series resistance of the cell. However, it must also have sufficient surface roughness to optimize the light confinement [11]. It can be seen in Figure 1 that there is a significant difference in the surface roughness of the three TCO layers.…”
Section: Resultsmentioning
confidence: 99%
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“…It is obvious that the front TCO layer has to exhibit high transparency in the useful spectrum range and a sufficient conductivity to limit the series resistance of the cell. However, it must also have sufficient surface roughness to optimize the light confinement [11]. It can be seen in Figure 1 that there is a significant difference in the surface roughness of the three TCO layers.…”
Section: Resultsmentioning
confidence: 99%
“…These nanostructured Si materials mainly include hydrogenated amorphous and microcrystalline silicon oxide (a-and μc-SiO:H) [2][3][4][5][6][7][8], protocrystalline (pc-Si:H) [9] and polymorphous (pm-Si:H) silicon [10] that could be used as alternatives to standard doped and absorber layers, respectively. On the other hand, the light trapping is mainly realized by texturing of transparent conductive oxide (TCO) layers on glass substrates [11]. However, this approach tends to deteriorate the electrical parameters of the cells with both a-and μc-Si:H absorber layers [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…Figure 2b shows the external quantum efficiency (EQE) spectrum of top and bottom cells for the four possible micromorph configurations employing these electrodes in front and back. The similarity of the morphology of all front electrodes is assessed by the perfect matching of the crossing of the top and bottom EQE curves for all substrates at the same wavelength (650 nm) [25]. The top cell current is only affected for such a thick cell by the front electrode (A, B and C, D are superimposed), and the higher optical band gap of the thin doped TCO layer enables a 0.2 mA cm −2 current gain.…”
Section: Resultsmentioning
confidence: 99%
“…The front and back electrodes are 2.3-µm-thick LPCVD ZnO layers with a low doping (carrier density of 2 × 10 19 ) and a high mobility (over 50 cm 2 /V/s), resulting in a sheet resistance below 30 Ω/ for a high transparency as seen in Figure 2a [25]. The thickness of the intrinsic layer of the a-Si:H top cell is 230 nm, and the thickness of the intrinsic layer of the µc-Si:H bottom cell is 2.3 µm.…”
Section: Resultsmentioning
confidence: 99%
“…The most common TCOs used as front electrodes for TF-Si solar cells in the superstrate (p-i-n) configuration are aluminum-doped zinc oxide (ZnO:Al) deposited by sputtering [12,13], boron-doped zinc oxide (ZnO:B) grown by low-pressure chemical vapor deposition (LPCVD) [14] and fluorine-doped tin oxide (SnO 2 :F) grown by atmospheric-pressure chemical vapor deposition (APCVD) [15,16].…”
Section: Introductionmentioning
confidence: 99%