2011
DOI: 10.1016/j.solmat.2010.10.027
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Optimized chemical bath deposited CdS layers for the improvement of CdTe solar cells

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Cited by 102 publications
(50 citation statements)
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“…It is because crystalline quality of the film plays an important role in the utilization of the CdS films for solar cell applications and thermal annealing leads to improve the crystalline quality of the films by the removal of strains, which can lead to the phase transition and thereby changing the band gap. Since annealing brings positive as well as negative effects to CdS physical properties [7,8], therefore, a better understanding of the impact of the annealed CdS film on the properties of the CdS/CdTe solar cell is still needed. Polycrystalline CdS thin films have been prepared by different techniques including vacuum evaporation [9], chemical bath deposition (CBD) [10], electrodeposition [11], sputtering [12], and laser ablation [13].…”
Section: Introductionmentioning
confidence: 99%
“…It is because crystalline quality of the film plays an important role in the utilization of the CdS films for solar cell applications and thermal annealing leads to improve the crystalline quality of the films by the removal of strains, which can lead to the phase transition and thereby changing the band gap. Since annealing brings positive as well as negative effects to CdS physical properties [7,8], therefore, a better understanding of the impact of the annealed CdS film on the properties of the CdS/CdTe solar cell is still needed. Polycrystalline CdS thin films have been prepared by different techniques including vacuum evaporation [9], chemical bath deposition (CBD) [10], electrodeposition [11], sputtering [12], and laser ablation [13].…”
Section: Introductionmentioning
confidence: 99%
“…4, the relationship between E g and absorption edge slope is therefore an inverse type. As explained by Han et al [37], semiconductor materials with sharper absorption edge will have lesser impurity energy levels and defects in the thin film. The explanation given by Han et al [37] demonstrates the possibility of GC+CC-treated CdTe layers to have lesser defects.…”
Section: Effect Of Different Post Deposition Treatments On Optical Anmentioning
confidence: 96%
“…As explained by Han et al [37], semiconductor materials with sharper absorption edge will have lesser impurity energy levels and defects in the thin film. The explanation given by Han et al [37] demonstrates the possibility of GC+CC-treated CdTe layers to have lesser defects. Another advantage of having a sharp absorption edge is that it allows more photons to be absorbed even when the CdTe thickness is of few microns [30].…”
Section: Effect Of Different Post Deposition Treatments On Optical Anmentioning
confidence: 96%
“…where, M is the weight of the sample in gm, A the area of the sample in cm 2 and ρ the materials density in gm cm −3 .…”
Section: Determination Of Film Thicknessmentioning
confidence: 99%
“…Thin films of II-VI semiconductors (e.g. CdS, ZnS, CdSe, ZnSe) are important for their applications in solid-state solar cells, optical coatings, optoelectronic devices and light emitting diodes [2].…”
Section: Introductionmentioning
confidence: 99%