Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications

Abstract

This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part of a typical distributed power architecture used in a space power application. The results show that processing the power at greater frequencies is possible with a reduction in mass and without impacting the system efficiency. The proposed solution was experimentally validated by the implementation of a 1 MHz zero-voltage and zero-current switching (ZVZCS) current-fed half-bridge converter with synchronous rectification compared with the same converter using silicon as the standard technology on power switches and working at 100 kHz. In conclusion, the replacement of silicon (Si) transistors by GaN HEMTs is feasible, and GaN HEMTs are promising next-generation devices in the power electronics field and can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters. The best physical properties of GaN HEMTs, such as inherent radiation hardness, low on resistance and parasitic capacitances, allow them to switch at higher frequencies with high efficiency achieving higher power density. We present an optimized design procedure to guaranty the zero-voltage switching condition that enables the power density to be increased without a penalization of the efficiency.

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

“…Figure 2b gives a first design of the commutation loop in a lateral configuration on PCB connected to transmission lines for the 2-port S-parameter characterization. According to Figure 2b, the measured inductance is given by (3), where L TL is the inductance induced by the transmission lines.…”

“…In this context, Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are attractive technologies for efficient power conversion at frequencies higher than the megahertz due to their higher electron mobility and lower interelectrode capacitances than silicon components [1]. Several recent works have brought to light the great potential of GaN power devices for high power density converter design [2][3][4][5][6].…”

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

“…As the representative of the wide bandgap semiconductor devices, the gallium nitride high-electron-mobility transistor (GaN HEMT) has excellent electrical performance, hightemperature resistance, high power, and resistance to extreme radiation environments, which could meet the needs of new-generation spacecraft energy systems [1][2][3][4]. When a nuclear-powered spacecraft works in space, in addition to radiation damage caused by energetic particles, the comprehensive radiation environment with neutrons and gamma rays could also lead to performance degradation or even device failure of electronic systems by displacement damage effects (DDD) and total dose effects (TID) [5][6][7][8][9].…”