2013
DOI: 10.1109/jstqe.2013.2266321
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Optimized Gallium Arsenide Modulators for Advanced Modulation Formats

Abstract: We review the guided-wave subcomponents required in the design of high-functionality modulators for advanced modulation formats using the GaAs/AlGaAs material system. In these complex devices, small loss contributions rapidly accumulate unless the substructures are well optimized, not only for low loss but also for process tolerance. Results for an advanced 40-Gb/s DQPSK modulator are presented.

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Cited by 29 publications
(16 citation statements)
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“…Thus, the velocitymatch is set by both the coplanar geometry and the electrode properties, either built into the epitaxial layer-structure (mainly the depletion thickness 'd') and others in the layout.e.g. width and segmentation filling-factor 11 . For highfrequency operation the RF dispersion is equally important.…”
Section: Velocity Matching and Rf Designmentioning
confidence: 99%
“…Thus, the velocitymatch is set by both the coplanar geometry and the electrode properties, either built into the epitaxial layer-structure (mainly the depletion thickness 'd') and others in the layout.e.g. width and segmentation filling-factor 11 . For highfrequency operation the RF dispersion is equally important.…”
Section: Velocity Matching and Rf Designmentioning
confidence: 99%
“…Low loss small-radius bends can be implemented using GaAs ridge waveguides [8]. For this reason, GaAs is well-suited to realizing modulator configurations of higher functionality in which more than one MZM is integrated onto a single chip.…”
Section: Rf Inline Configurationsmentioning
confidence: 99%
“…Multi-mode interference (MMI) principles are used to design various optical couplers, splitters and recombiners [8] such as the 2x2 recombiner shown in the upper inset of Fig. 5.…”
Section: A Optical Couplers and Bendsmentioning
confidence: 99%
“…The proposed waveguide design can be used in the substrate removed GaAs/AlGaAs electro-optic modulator [3], in novel T rail electrodes for substrate removed low voltage high speed GaAs/AlGaAs electro optic modulator [4] and in optimized GaAs/AlGaAs modulators for advance modulation format [11].…”
Section: -mentioning
confidence: 99%