Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

Li, Yi-liu; Yang, Wenyu; Peng, Yu-min; Yao, Jia-min; Zhong, Yi-ming; Zhang, Zilong; Wei, Meng; Liang, Guangxing; Fan, Ping; Zheng, Zhaoke

doi:10.1016/j.jallcom.2023.169730

Cited by 5 publications

(3 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fitted curves for Sb 3d at 528.8 and 538.2 eV correspond to Sb 3d3/2 and Sb 3d5/2 [34]. Meanwhile, Te 3d displays a peak at 569.7 eV for Te 3d5/2, and 580.1 eV for Te 3d3/2 [15,35]. Notably, higher binding energy peaks at 573.5 eV and 582.9 eV are attributed to tellurium oxide formation resulting from surface oxidation [36].…”

Section: Resultsmentioning

confidence: 96%

“…For example, monolayer PtSe 2 is a p-type semiconductor with an indirect band gap of 1.16 eV [11][12][13]. To achieve high-performance photodetectors, this work introduces Sb 2 Te 3 , a p-type semiconductor with a direct band gap of 0.33 eV [14,15], to construct p-n heterojunctions with n-type two-dimensional transition metal chalcogenides. Nevertheless, the current approach to Nanomaterials 2024, 14, 884 2 of 11 building novel two-dimensional layered material heterostructures primarily relies on the repetitive and inefficient mechanical exfoliation process [16], which is not conducive to mass industrial production.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Pan,

Dou,

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p–n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.

show abstract

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Pan,

Dou,

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…In addition to optimizing the structures of materials to achieve better flexibility, other approaches can be considered to enhance the flexibility of the material to a certain extent 42,74–76 . For example, improving the bonding between the material and the substrate, 77 selecting appropriate substrates, 78 or combining the material with highly flexible materials such as carbon nanotubes (CNTs) and organic polymers 9 . When engaging in material composites, it is important to be mindful that the composite materials may potentially impact the thermoelectric performance of the inorganic materials 6 .…”

Section: Flexible Bismuth/antimony Chalcogenide Thin Films and Their ...mentioning

confidence: 99%

Advances in flexible inorganic thermoelectrics

Shi,

Cao,

Chen

et al. 2023

EcoEnergy

View full text Add to dashboard Cite

Solid‐state bismuth telluride‐based thermoelectric devices enable the generation of electricity from temperature differences and have been commercially applied in various fields. However, in many scenarios, the surface of the heat source is not flat. Therefore, it is crucial to develop flexible thermoelectric materials and devices to efficiently utilize heat sources and expand their applications. Compared with organic thermoelectric materials and devices, inorganic flexible thermoelectric materials and devices have much higher thermoelectric performance and stability. Considering the rapid development in this research field, we carefully summarize the design principles, structures, and thermoelectric properties of inorganic flexible materials and their devices reported in the recent 3 years, including sulfides, selenides, tellurides, and composite materials designed based on these inorganics. The structural designs of flexible thermoelectric devices based on micro‐sized bulk materials are also carefully summarized. Additionally, we overview the mechanical stability and methods for reducing internal resistance for designs of inorganic flexible thermoelectric devices. In the end, we provide outlooks on future research directions for inorganic flexible thermoelectric materials and devices. This review will help guide thermoelectric researchers, beginners, and students.

show abstract

Uniaxial‐Stress Driven Performance Enhancement of Multi‐Beam Spark Plasma Sintered BiSbTe/Epoxy Flexible Films

Ai,

Ke,

Nie

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

The multi‐beam discharge plasma sintering (MB‐SPS) method is successfully applied to the preparation of Bi2Te3‐based thermoelectric (TE) films with insulating substrates. Herein, the impact of uniaxial stress on the microstructure evolution and TE performance are explored systematically. The results indicate that the increase of uniaxial stress promotes the preferential growth of Bi0.5Sb1.5Te3 (BST) grains along the (000l) crystal plane, leading to the remarkable increase in carrier mobility. The maximum (000l) preferential orientation factor reaches 80% for the BST/epoxy (EP) film sintered under 25 MPa, which is 3.08 times higher than that of BST/EP film sintered at 10 MPa. While the highest power factor reaches 2.36 mW m−1 K−2 at 300 K for the BST/EP film sintered under 20 MPa, increased by 97% as compared with that of the film sintered under 10 MPa. This work once again confirms that the MB‐SPS technology is an effective approach to prepare high‐performance Bi2Te3‐based films with insulating substrates and demonstrates that the (000l) preferential orientation and TE performance of the films can be further enhanced by an appropriate uniaxial stress.

show abstract

Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

Cited by 5 publications

References 40 publications

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Advances in flexible inorganic thermoelectrics

Uniaxial‐Stress Driven Performance Enhancement of Multi‐Beam Spark Plasma Sintered BiSbTe/Epoxy Flexible Films

Contact Info

Product

Resources

About