2015
DOI: 10.1117/1.jmm.14.4.044001
|View full text |Cite
|
Sign up to set email alerts
|

Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression

Abstract: Hybrid metrology, e.g., the combination of several measurement techniques to determine critical dimensions, is an increasingly important approach to meet the needs of the semiconductor industry. A proper use of hybrid metrology may yield not only more reliable estimates for the quantitative characterization of 3-D structures but also a more realistic estimation of the corresponding uncertainties. Recent developments at the National Institute of Standards and Technology (NIST) feature the combination of optical… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
9
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 12 publications
(9 citation statements)
references
References 16 publications
0
9
0
Order By: Relevance
“…Imaging these targets permits spatial localization of a region of interest (ROI) smaller than the scatterometric spot size, and several targets can be imaged within the field of view of the microscope without degrading the dimensional measurements (27). Our group has also yielded imagebased measurements of overlay using finite sets of arrayed lines (3) and has also concentrated on the measurement of line width, often referred to in nanoelectronics as the "critical dimension" (CD) (28).…”
Section: Scatterfield Microscopymentioning
confidence: 99%
“…Imaging these targets permits spatial localization of a region of interest (ROI) smaller than the scatterometric spot size, and several targets can be imaged within the field of view of the microscope without degrading the dimensional measurements (27). Our group has also yielded imagebased measurements of overlay using finite sets of arrayed lines (3) and has also concentrated on the measurement of line width, often referred to in nanoelectronics as the "critical dimension" (CD) (28).…”
Section: Scatterfield Microscopymentioning
confidence: 99%
“…For 1x nm and beyond, however, TMU should be more improved. Hybrid metrology [33][34][35] and= or X-ray metrology [36][37][38] will be candidate in addition to optical scatterometry.…”
Section: Nm Hpmentioning
confidence: 99%
“…This combined use of different metrology tools is known as hybrid metrology. [33][34][35] The scatterometry results were validated by scanning transmission electron microscopy (STEM). As a reference, we also tried conventional scatterometry in which spectra were acquired only after development to simultaneously analyze both guide and DSA pattern.…”
Section: Cross-sectional Profile Metrologymentioning
confidence: 99%
“…The regression problem then amounts to minimizing the difference between the modeled and the measured data. We therefore solve for the parameter vector that minimizes the so-called χ 2 function, measuring the goodness of fit of the simulation to the measurement data given by the weighted norm (3) In this formulation we implicitly assume that the measurement data y is a noisy realization of the model, and that we have an additive error model where (4) Note that the the errors that are added to each of the model values can also be arranged as an m-dimensional vector. We assume the errors to be normally distributed with zero mean and m × m covariance matrix Σ ϵ .…”
Section: Bayesian Approachmentioning
confidence: 99%
“…This paper can be seen as a continuation of that work and Ref. [4], with an emphasis on the proper treatment of the measurement errors, including highly correlated and systematic errors and their influence on hybrid metrology. Tool-induced errors for OCD and scale errors for SEM are investigated, and it is shown how the parametric uncertainties can be decreased if those issues are addressed accurately in the hybridization.…”
Section: Introductionmentioning
confidence: 99%