APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems 2006
DOI: 10.1109/apccas.2006.342397
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Optimizing Interconnect for Performance in Standard Cell Library

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Cited by 4 publications
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“…As far as the active devices are concerned, accurate process dependent transistor models including parasitics effects can be found in the literature. As for the minimization of the active devices variations, several techniques such as silicon strain and high-K gate dielectric, among others, have been proposed as a way of maintaining transistors performance in spite of the everdiminishing device sizes [7], the variability of the active devices parameters will not be considered in this paper. Yet the need for using integrated inductors raises additional modelling needs where the variability of the metal width, the spacing between conductor and the thickness of interlayer dielectrics must be taken into account.…”
Section: Fig 1 Lc-vco Design Architecturementioning
confidence: 99%
“…As far as the active devices are concerned, accurate process dependent transistor models including parasitics effects can be found in the literature. As for the minimization of the active devices variations, several techniques such as silicon strain and high-K gate dielectric, among others, have been proposed as a way of maintaining transistors performance in spite of the everdiminishing device sizes [7], the variability of the active devices parameters will not be considered in this paper. Yet the need for using integrated inductors raises additional modelling needs where the variability of the metal width, the spacing between conductor and the thickness of interlayer dielectrics must be taken into account.…”
Section: Fig 1 Lc-vco Design Architecturementioning
confidence: 99%