Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

Abstract

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

“…Si-based devices have been widely utilized in various applications, such as solar cells, LEDs, and photodetectors [1][2][3][4]. Especially for photodetectors, rapid response performance is crucial for the realization of sensor networks and optical communications.…”

“…In addition, high-performing UV photodetectors have specific applications in ozone sensing, flame detection, and military surveillance [5,6]. To improve the performance of a UV photodetector, various designs and materials have been applied, such as the GaN-based Schottky junction [6], graphene-based junction [6][7][8], GaAs/AlGaAs nanowires [9], ITO nanodomes [10], ITO nanowires with ZnO film [11,12], NiO/ZnO films [5], ZnO/ZnS nanowires [13], ZnO nanorods [14], ZGO nanowires [15], and Si/ZnO nanowires [1]. When considering the complexity of elaborate photodetector designs, the fabrication steps and cost should also be considered for practical applications [2].…”

Photoelectric characteristics of the p–n junction between ZnO nanorods and polyaniline nanowires and their application as a UV photodetector

“…In recent years, nanostructured materials have been widely investigated because of their potential applications in nanoscale electronic and optoelectronic devices, such as field effect transistors, gas sensors, chemical sensors and photodetectors [1][2][3][4]. With a wide direct band gap of 3.37 eV and a large 2 exciton binding energy of 60 meV, ZnO nanostructure has been widely investigated and exhibited potential applications for UV photodetectors [5][6][7][8].…”

Tribotronic Phototransistor for Enhanced Photodetection and Hybrid Energy Harvesting

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wileyonlinelibrary.comAs a three-way coupling effect among semiconductor, piezoelectricity, and photoexcitation, the piezo-phototronic effect was fi rst proposed in 2010 [ 6 ] and has demonstrated strain-enhanced light-emitting diodes, [ 7,8 ] photodetectors, [ 9,10 ] and photocells [ 11,12 ] by modulating the charge carrier transport, separation, or recombination through strain-induced piezoelectric polarization charges. Recently, the invention of a triboelectric nanogenerator (TENG) has provided not only sustainable power sources [13][14][15][16][17] and self-powered devices, [18][19][20] but also proposed triboelectric-charge-controlled devices [21][22][23] and opened up a new research fi eld of tribotronics.

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