Optimizing the efficiency of a dc-dc boost converter over 98% by using commercial SiC transistors with switching frequencies from 100 kHz to 1MHz

Rodríguez, Ángel Cervera; Fernández, Marcos; Vázquez, Aitor; Lamar, Diego G.; Arias, Manuel; Sebastián, J.

doi:10.1109/apec.2013.6520278

Cited by 14 publications

(5 citation statements)

References 21 publications

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“…The inherent material characteristics of SiC make it highly attractive for applications requiring a vast range of thermal robustness [1]. Though, successful switching applications have been demonstrated showcasing noteworthy performance metrics at high efficiency non-extraneous conditions [2][3][4][5][6]. This paper describes a design for reliability approach to implement a novel solar electric propulsion (SEP) system architecture which utilizes commercially available SiC Power MOSFETs in a multiphase hard-switching boost implementation.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Ikpe

Lauenstein

Carr

et al. 2016

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

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Section: Introductionmentioning

confidence: 99%

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Ikpe

Lauenstein

Carr

et al. 2016

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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“…If the PV system uses both boost converter and an inverter, the boost converter can enhance the dc output voltage stability, and therefore, reduce the effect of fluctuation on the ac output [17]. The efficiency of the boost converter is also known to be very high [18]. With the use of MOSFET and 500 kHz switching frequency, the boost converter shows more than 97% efficiency [18].…”

Section: Proposed Magnetic Linked Convertermentioning

confidence: 99%

“…The efficiency of the boost converter is also known to be very high [18]. With the use of MOSFET and 500 kHz switching frequency, the boost converter shows more than 97% efficiency [18].…”

Section: Proposed Magnetic Linked Convertermentioning

confidence: 99%

A Magnetic-Linked Multilevel Active Neutral Point Clamped Converter With an Advanced Switching Technique for Grid Integration of Solar Photovoltaic Systems

Mahfuz-Ur-Rahman

Islam

Muttaqi

et al. 2020

IEEE Trans. on Ind. Applicat.

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“…The reason for applying 2 V instead of 0 V to turn on the JFET is to improve the on-resistance of this device, thereby slightly reducing conduction losses. Taking all these considerations into account, a new driver was developed for the SiC JFET as can be seen in [16]. Note that this driver's capability to supply current is provided by an IC EL7156 manufactured by INTERSIL ® (i.e.…”

Section: A Converter Specifications and Componentsmentioning

confidence: 99%

Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration

Rodríguez

Díaz

Lamar

et al. 2014

IEEE Trans. Power Electron.

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Silicon Carbide (SiC) devices are becoming increasingly available on the market due to the mature stage of development fact of their manufacturing process. Their numerous advantages compared to silicon (Si) devices, such as, for example, higher blocking capability, lower conduction voltage drop and faster transitions make them more suitable for high-power and high-frequency converters. The aim of this paper is to study the switching behavior of the two most-widely studied configurations of SiC devices in the literature: the normally-on SiC JFET and the cascode using a normally-on SiC JFET and a low-voltage Si MOSFET. A detailed comparison of the turn-on and turn-off losses of both configurations is provided and the results are verified against experimental efficiency results obtained in a boost converter operating in both Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM). Furthermore, special attention will be paid to the switching behavior of the cascode configuration, analyzing the effect of its low-voltage Si MOSFET and comparing different devices. The study carried out will confirm that the overall switching losses of the JFET are lower, making it more suitable for operating in CCM in terms of the overall converter efficiency. However, the lower turn-off losses of the cascode show this device to be more suitable for DCM when ZVS is achieved at the turn-on of the main switch. Finally, all the theoretical results have been verified in an experimental 600W boost converter.

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Optimizing the efficiency of a dc-dc boost converter over 98% by using commercial SiC transistors with switching frequencies from 100 kHz to 1MHz

Cited by 14 publications

References 21 publications

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

A Magnetic-Linked Multilevel Active Neutral Point Clamped Converter With an Advanced Switching Technique for Grid Integration of Solar Photovoltaic Systems

Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration

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