Optimizing the hot carrier reliability of N-LDMOS transistor arrays

Performance drifts of N-MOSFETs under pulsed RF life test

“…This variation affects the RF performances. According to the literature [14][15][16], the degradation cause for RF N-LDMOS technology is attributed to hot electron-induced interface state generation [16][17][18]. May be state interface Si/SiO 2 between drain and gate are responsible of this phenomenon.…”

“…9, using physical simulation software (Silvaco-Atlas, 2D). This strong electric field causes the generation of charge states at the silicon-oxide interface [21,22]. Since the N-LDMOS is used in these conditions, where drain is biased with high voltage simultaneously with thermal excitation make easy the current flow.…”

“…The hot carrier degradation effect is closely related with current density and with the total number of free electrons at the siliconoxide interface, where most of the electrons are concentrated deep inside the drift region [21][22][23]. More a greater percentage of the current flows is located along and below the Si-SiO 2 interface.…”

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

“…The proposed degradation mechanism, consists of hot carrier generating interface states (traps) and trapped electron charge which results in a build up of negative charge at the Si-SiO 2 interface as explained in [9]. The location of this charge is likely to be in the vicinity of the intersection of the impact ionization with the Si-SiO 2 interface.…”

“…7, using physical simulation software (Silvaco-Atlas, 2D). This strong electric field causes the generation of charge states at the silicon-oxide interface [9,16]. Since the LDMOS is used in these conditions, where drain is biased with high voltage simultaneously with thermal excitation due to thermal cycling and shock (making easy the current flow), these two factors translated the correlation of thermal and electrical stresses [17].…”