Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase

Mohan, A.; Schropp, R.E.I.; Poulios, Ioannis; Goedheer, W. J.; Rath, J.K.

doi:10.1002/pssa.201532938

Cited by 2 publications

(2 citation statements)

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“…The NPs described in this paper are grown in a dedicated plasma reactor, more details of which can be found elsewhere [14] [16]. The source gases of SiH 4 and Ar are fed through the bottom showerhead electrode and are dissociated by the applied oscillating very high frequency (VHF) electric field of 60 MHz.…”

Section: Methodsmentioning

confidence: 99%

“…Various plasma process parameters such as coupled power, process pressure, gas flow, and source gas ratios (SiH 4 :H 2 ) and inter-electrode distance play crucial roles in determining the size and crystallinity of the synthesized Si nanoparticles (NPs). We have performed an extensive study on the synthesis of silicon nanoparticles in the gas phase in a capacitively coupled VHF discharge as a function of crystalline ratio by changing the above parameters and highlighted the interdependence of crystalline ratio and residence time [24]. In this reference we changed the residence time both by changing the pressure and inter-electrode distance.…”

Section: Fig 1 : Raman Crystalline Ratio Of the Deposited Nps As A Function Of T On The Inset Gives The Zoomed In Image At The Smaller Vmentioning

confidence: 99%

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Microscopic studies of polycrystalline nanoparticle growth in free space

Mohan

Kaiser

Verheijen

et al. 2017

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Fig 1 : Raman Crystalline Ratio Of the Deposited Nps As A Function Of T On The Inset Gives The Zoomed In Image At The Smaller Vmentioning

confidence: 99%