Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

Исаханов, З. А.; Mukhtarov, Z. E.; Umirzakov, B. E.; Рузибаева, М. К.

doi:10.1134/s1063784211040177

Cited by 19 publications

(10 citation statements)

References 1 publication

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“…Several studies already showed that Cs implanted into Mo led to a reduction of the work function [29][30][31][32] . In their work Tompa, Carr and Seidl investigated the work function changes by varying the dose and energy (up to 1 keV) of the Cs + ions impinging a Mo surface.…”

Section: Introductionmentioning

confidence: 99%

First experiments with Cs doped Mo as surface converter for negative hydrogen ion sources

Schiesko

Cartry

Hopf

et al. 2015

Journal of Applied Physics

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A study was conducted on the properties of molybdenum implanted with caesium as an approach to reduce the Cs consumption of negative hydrogen ion sources based on evaporated Cs. The depth profiles of the implanted Cs were simulated by SDTrimSP and experimentally determined by XPS depth profiling. In particular, one year after implantation, the depth profiles showed no signs of Cs diffusion into the molybdenum, suggesting long term stability of the implanted Cs atoms. The H − surface generation mechanisms on the implanted samples in hydrogen plasma were investigated and the stability of the H − yield during four hours low power hydrogen plasma discharges was demonstrated. An estimation of the work function reduction (-0.8 eV) by the Cs implantation was performed and a comparison of the relative negative ion yields between the implanted samples and highly oriented pyrolitic graphite (HOPG) showed that the Cs doped Mo negative ion yield was larger.

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Section: Introductionmentioning

confidence: 99%

First experiments with Cs doped Mo as surface converter for negative hydrogen ion sources

Schiesko

Cartry

Hopf

et al. 2015

Journal of Applied Physics

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“…Такие структуры в основном создаются методами термического окисления, ионноплазменного осаждения, ионной имплантации. В настоящее время хорошо изучены состав, структура и свойства пленок SiO 2 /Si различной толщины, полученные различными методами [1][2][3][4][5]. При этом наиболее однородные нанопленки (d ≤ 50−60 ¦ ) SiO 2 , как в случае силицидов металлов [6][7][8][9], получены методом низкоэнергетической ионной имплантации в сочетании с отжигом [4,5].…”

Section: Introductionunclassified

Состав и морфология поверхности Si(111) с поверхностной пленкой SiO-=SUB=-2-=/SUB=- разной толщины

Умирзаков¹,

Донаев²,

Ёркулов³

et al. 2021

Физика И Техника Полупроводников

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In this work, the composition, morphology, and electronic structure of SiO2 nanofilms of various thicknesses, created by thermal oxidation on the Si(111) surface, have been studied. It is shown that up to a thickness of 30–40 Å, the film has an island character. At d ≥ 60 Å, a homogeneous continuously film of SiO2 is formed and the stoichiometric surface roughness of which does not exceed 1.5 - 2 nm. Regardless of the film thickness of the SiO2 appreciable interdiffusion of atoms at the interface SiO2-Si not observed. The regularities of the change in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of the SiO2/Si(111) films in the range from 20 to 120 Å have been determined.

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“…Analysis of the X-ray spectra showed that the МоО 3 (or МоО 4 О 11 ) phase forms predominantly at Т = 160°С; and the МоО 2 phase, in the interval of Т = 300-700°С [11]. It is known [13][14][15][16][17][18][19] that lowenergy ion implantation is an effective tool for obtaining homogeneous nanofilms with stoichiometric compositions on the surfaces of materials of a different nature. In particular, using X-ray photoelectron spectroscopy, the authors of [13][14][15] studied Mo surface oxidation under bombardment with low-energy oxygen ion beams (Е 0 = 1-5 keV).…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

Allayarova

2020

J. Synch. Investig.

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The composition, the surface morphology, and the crystalline and electronic structure of МоО 3 nanofilms are studied using a set of methods, namely, scanning electron spectroscopy and high energy electron diffraction, photoelectron spectroscopy, and secondary electron emission. These nanofilms are obtained by implanting ions into a Mo single crystal heated to Т = 850 K. Films with different thicknesses (~30, 60, and 90 Å) are obtained at an ion energy of 1-5 keV and a dose of D = (4-8) × 10 17 cm-2. It is shown that a continuous and homogeneous polycrystalline МоО 3 film with a surface roughness of at most 1.5 nm is formed. The band gaps of these films are ~3.4 eV, and the widths of the conduction bands are 4.5 eV. It is discovered that there are four maxima of the density of electronic states in the valence band; probably, they are due to hybridization of the N 5 , N 45 , N 4 energy levels of Mo with the L 2 , L 23 , and L 3 energy levels of oxygen.

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Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

Cited by 19 publications

References 1 publication

First experiments with Cs doped Mo as surface converter for negative hydrogen ion sources

First experiments with Cs doped Mo as surface converter for negative hydrogen ion sources

Состав и морфология поверхности Si(111) с поверхностной пленкой SiO-=SUB=-2-=/SUB=- разной толщины

Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

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