Optimum Photoluminescence Excitation and Recharging Cycle of Single Nitrogen-Vacancy Centers in Ultrapure Diamond

Beha, Katja; Batalov, Anton; Manson, Neil B.; Bratschitsch, Rudolf; Leitenstorfer, Alfred

doi:10.1103/physrevlett.109.097404

Cited by 162 publications

(173 citation statements)

References 23 publications

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“…Previous experiments demonstrated that the charge-state conversion is mainly a two-photon process with a laser wavelength longer than 500-nm. 25,30,36 The NV is first pumped to the excited state of NV 2 or NV 0 ; then, an electron is released to the conduction band during ionization or captured from the valance band during recharging. 24 The nonlinear power dependence of the conversion rates in Figure 1f was obtained by repeating the measurement of Figure 1d with different laser powers.…”

Section: Resultsmentioning

confidence: 99%

“…For the same power, the charge-state conversion rate of the 532-nm laser is higher than that of the 637-nm laser, as observed in Figure 1f, which might result from the wavelength-dependent absorption cross-section of the NV center at room temperature. 25,36 Therefore, the resolution of iCSD is better than that of rCSD for the same power and duration of the D laser. In reality, the improvement of the CSD resolution remains limited by the power of the laser and stability of the piezo stage.…”

Section: Csd Microscopymentioning

confidence: 99%

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Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

et al. 2015

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As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV) center in diamond presents both challenges and opportunities resulting from charge-state conversion. By utilizing different lasers for the photon-induced charge-state conversion, we achieved subdiffraction charge-state manipulation. The charge-state depletion (CSD) microscopy resolution was improved to 4.1 nm by optimizing the laser pulse sequences. Subsequently, the electron spin-state dynamics of adjacent NV centers were selectively detected via the CSD. The experimental results demonstrated that the CSD can improve the spatial resolution of the measurement of NV centers for nanoscale sensing and quantum information. Keywords: charge state; NV center; photon ionization; super-resolution microscopy INTRODUCTION Because of the stable fluorescence and long coherence time of its spin state, the negatively charged nitrogen vacancy (NV 2 ) center in diamond has been studied extensively over the past decade. This defect has the potential to be used for quantum computation, 1-4 nanoscale metrology 5-8 and biological imaging. [9][10][11] To further extend the study of the interaction between a multi-NV center and the nanoscale sensing with the NV center, it is necessary to detect and control the NV center spin-state dynamics with high spatial resolution. 7,12-14 Therefore, many optical super-resolution microscopy techniques have been developed to detect single NV centers. [13][14][15][16][17] Among these methods, stimulated emission depletion (STED) microscopy 12,18-20 is one of the most promising. This method utilizes a doughnut-shaped laser to produce the position-dependent stimulated emission, which changes the fluorescence signal. With STED, the electron spin resonance signals of NV centers have been detected with a resolution lower than the diffraction limit. 12,21,22 A new super-resolution microscopy technique was recently developed by Han et al. 15 The authors replaced the stimulated excitation of STED with the dark-state pumping of NV centers. The dark state was later proven to be the neutral charge NV center (NV 0 ) by other groups. [23][24][25] The charge-state conversion results in a change of the local field in diamond 26 and the spectral diffusion of the NV center. 24,27 For high-fidelity quantum manipulation, the charge state should be well controlled. 28 Based on the mechanism of charge-state conversion and super-resolution microscopy, 25,29,30 we demonstrated the optical manipulation of the charge state of an NV center with subdiffraction resolution. By changing the duration and power of laser

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Section: Resultsmentioning

confidence: 99%

Section: Csd Microscopymentioning

confidence: 99%

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

et al. 2015

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“…Even at 9K, only 4% of the fluorescence is emitted into the ZPL which exhibits a narrow, ideally lifetime limited linewidth (13 MHz, [39] ) at low temperature; Coupling of NV centers to a photonic structure has thus either to be broadband or has to overcome the emission into the sideband by a highly efficient coupling [40] . NV centers have a lifetime of 12 ns in bulk [41] , the emitted light is only partially polarized [42] and efficiency can be limited by switching to the neutral charge state [43] . There is therefore an ongoing quest to identify and characterize other emitters for photonic applications.…”

Section: Nv Centersmentioning

confidence: 99%

Diamond Nanophotonics

Aharonovich

Neu

2014

Advanced Optical Materials

301

233

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“…This result reveals the existence of a significant source of electric field noise. It is known that a two-photon ionization process of the NV defect can promote charge carriers to the conduction band of diamond [30][31][32] . This mechanism was recently used to demonstrate photoelectric detection of the electron spin resonance 33 .…”

mentioning

confidence: 99%

Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond

et al. 2016

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We analyze the impact of electric field and magnetic field fluctuations in the decoherence of the electronic spin associated with a single nitrogen-vacancy (NV) defect in diamond by engineering spin eigenstates protected either against magnetic noise or against electric noise. The competition between these noise sources is analyzed quantitatively by changing their relative strength through modifications of the environment. This study provides significant insights into the decoherence of the NV electronic spin, which is valuable for quantum metrology and sensing applications.Improving the coherence time of solid-state spin qubits is a central challenge in quantum technologies. Decoherence is induced by fluctuations of the local environment and can be mitigated by following several strategies. On one hand, the tools of material science can be exploited to engineer host samples with quantum grade purity 1 . As an example, millisecond-long coherence times have been achieved for electron spin impurities in isotopically purified diamond samples at room temperature 1,2 , while few seconds can be obtained in purified silicon at low temperature 3 . On the other hand, the coherence time can be improved through active quantum control of the many-body environment 4-7 or by decoupling the central spin from its fluctuations, either by applying periodic spin flips 8-10 or by engineering spin eigenstates which are protected against environmental noise [11][12][13][14] . However, for these strategies to be effective, it is crucial to first identify the sources of noise and understand precisely their impact on the coherence properties of the central spin.Here we analyze how magnetic and electric field fluctuations impair the quantum coherence of the electronic spin associated with a single nitrogen-vacancy (NV) defect in diamond. This atomic-sized defect is attracting considerable interest for a broad range of applications including quantum metrology and sensing 15-17 , quantum information processing 18 and hybrid quantum systems [19][20][21] . For all these applications, optimal performances require a long spin coherence time. In this work, we analyze the contributions of magnetic and electric field fluctuations to spin decoherence by exploiting spin eigenstates protected either against magnetic noise or against electric noise 22 . The competition between these noise sources is then analyzed quantitatively by changing their relative strength through modifications of the NV defect environment.The NV defect in diamond has a spin triplet ground state S = 1 with a zero-field splitting D ≈ 2.88 GHz between the m s = 0 and m s = ±1 spin sublevels, where m s denotes the spin projection along the NV symmetry axis (z). The spin Hamiltonian describing the ground state in the presence of strain, electric field E and magnetic field B has been discussed in detail in Refs. [22,23]. The strain, which is induced by a local deformation of the diamond crystal, can be treated as a local static electric field Σ interacting with the NV defect throug...

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Optimum Photoluminescence Excitation and Recharging Cycle of Single Nitrogen-Vacancy Centers in Ultrapure Diamond

Cited by 162 publications

References 23 publications

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Diamond Nanophotonics

Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond

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