2012
DOI: 10.1063/1.3691790
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Optimum strain configurations for carrier injection in near infrared Ge lasers

Abstract: The behavior of direct and indirect valleys in Ge, and the bandgap shrinking, under different tensile-strain conditions in bulk Ge and Ge quantum well structures are explored using the deformation potential and k·p methods. The doping density required for filling the indirect valleys up to the Γ-valley is calculated for various strain and growth conditions, as well as the efficiency of electron injection into the Γ-valley, and the optimum cases for Ge laser operation are identified.

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Cited by 41 publications
(29 citation statements)
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“…The energetic order of the heavy and light hole bands is reverted when moving from the uniaxial to the biaxial case. Most of the theoretical work concerning Ge light emission utilizes k·p theory including 6 bands (Aldaghri et al, 2012;Chang and Cheng, 2013;Virgilio et al, 2013), 8 bands (Zhu et al, 2010;Wirths et al, 2013b), or 30 bands (El Kurdi et al, 2010). The latter is not restricted to the Brillouin-zone center but describes the full energy dispersion.…”
Section: Band Structurementioning
confidence: 99%
“…The energetic order of the heavy and light hole bands is reverted when moving from the uniaxial to the biaxial case. Most of the theoretical work concerning Ge light emission utilizes k·p theory including 6 bands (Aldaghri et al, 2012;Chang and Cheng, 2013;Virgilio et al, 2013), 8 bands (Zhu et al, 2010;Wirths et al, 2013b), or 30 bands (El Kurdi et al, 2010). The latter is not restricted to the Brillouin-zone center but describes the full energy dispersion.…”
Section: Band Structurementioning
confidence: 99%
“…Many material properties like electronic band structures can indeed be tailored by strain. For Germanium, it has been predicted that high tensile strain can tune the relative band gap energies, improving light emission and transforming it into a direct band gap material, [8][9][10][11][12] opening the way to mid-infrared lasers fully compatible with Complementary Metal Oxide Semiconductor (CMOS) technology. The tensile strain needed to reach a direct bandgap has been theoretically estimated to be around 4.6 % 13-15 for a uniaxial loading along <100>.…”
Section: Introductionmentioning
confidence: 99%
“…1 The application of 4%-5% uniaxial strain to Ge, along the [1 0 0] direction, is predicted to transform Ge into a direct-gap semiconductor. [2][3][4] A direct-gap semiconductor which is fully compatible with Si-based technology would allow full integration of electronics and optoelectronics and represents a highly sought goal, 5,6 so various methods of inducing the required strain in Ge micro-and nano-structures are under investigation. [7][8][9][10][11] Ge microbridges featuring 3% uniaxial strain along [1 0 0] have demonstrated greatly enhanced photoluminescence efficiency, 12 and even higher strain has been observed in smaller bridges.…”
mentioning
confidence: 99%