Opto-electrical properties of Ni and Mg co-doped CdS thin films prepared by spin coating technique

Garmim, Taoufik; Bouabdalli, El Mahdi; Soussi, L.; Jouad, Zouhair El; Mghaiouini, Redouane; Louardi, A.; Hartiti, Bouchaíb; Jouad, Mohamed El; Monkade, Mohamed

doi:10.1088/1402-4896/abe3c0

Cited by 21 publications

(4 citation statements)

References 43 publications

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“…This data indicates that, as compared to SnO 2 , TiO 2 has a higher crystallite boundary. The following equation [25] was used to compute dislocation density, which represents the number of oxygen vacancies and defects in the lattice system that can significantly alter material properties.…”

Section: Resultsmentioning

confidence: 99%

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Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films

et al. 2023

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Pulsed laser deposition was used to fabricate the thin films of SnO2 and SnO2-TiO2 composites on FTO substrates and these films were characterized to understand the effect of TiO2 on the structural, optical, and electrical properties of SnO2. The crystalline nature, phase purity, and optical bandgap were determined using X-ray diffraction and UV-Vis measurements, respectively. The Tauc plots confirm that the composite films have a higher band gap energy than SnO2. EDX spectra demonstrate that the thin films contain Ti, Sn, and O ions. The photoluminescence (PL) spectra indicate three blue emission bands at wavelengths of 410, 435, and 460 nm and these are due to the oxygen vacancies or interstitial oxygen ions and defect related states formed during the thin-film deposition of SnO2 and composites. These films are n-type semiconductors as verified by the Hall Effect measurements. At the interface of the film, the frequency dependence of the dielectric at room temperature reveals that as the frequency increases, the dielectric constant and dielectric losses decrease. SnO2 film has a significantly higher a.c. conductivity than the SnO2-TiO2 composite films. The correlated barrier hopping (CBH) mechanism is responsible for the conduction behaviour and obeys Johncher's power law (n<1). Both films exhibit a frequency-dependent increase in impedance. The addition of TiO2 in SnO2 affects the structural, optical, dielectric, and ac conductivity of films at room temperature. These optical and n-type semiconducting nature supports the potential application in microelectronics, optoelectronics, and sensor applications.

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Section: Resultsmentioning

confidence: 99%

“…An absorption coefficient obeys the following relationship, where C is constant and E g is optical band gap energy [25].…”

Section: Uv-vis Analysismentioning

confidence: 99%

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films

et al. 2023

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“…Two of the probes are used to measure the current, and the other two probes are used to measure the corresponding voltage. The electrical sheet resistance of the thin layers investigated has been measured directly by the device and calculated using the following equation [64,65]:…”

Section: Electrical Propertiesmentioning

confidence: 99%

Preparation and Characterization of Nickel and Aluminum-Codoped SnO2 Thin Films for Optoelectronic Applications

Bouabdalli

Jouad

Garmim

et al. 2021

International Journal of Photoenergy

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In this study, the coating technique was used to prepare thin layers of nickel and aluminum-codoped tin oxide (SnO2: Ni; Al). This study is aimed at exploring the influence of aluminum (Al) dopant on the structural, optical, and electrical properties of the elaborated films. X-ray diffraction (XRD) studies discovered that all deposited films (Ni-doped and Al-Ni-codoped SnO2) were polycrystalline with tetragonal (quadratic) structure and exhibited [110] preferential orientation. The optical measurements exposed that all prepared films have presented good transparency. The transmittance of Ni-Al-codoped SnO2 thin films in the visible and near-infrared regions varied between 80% and 90%; this was dependent on the concentration of dopant. The band gap was determined via the equation related to the absorption coefficient. It was deduced that the optical band gap values of thin films gradually decreased from 4.084 eV to 3.991 eV, as an effect of Al content. In addition, it was concluded that the thickness values of the films pass from 571.374 nm to 694.036 nm as an effect of Al content. Moreover, the extinction coefficient decreases with the wavelength in the UV region and then varies slightly towards longer wavelengths. Moreover, the electrical resistivity was determined using the four-point probe; it was determined that the electrical resistivity decreases from 1.35 × 10 3 Ω · cm to 0.14 × 10 3 Ω · cm with aluminum concentration increasing from 0 at. % to 7 at. %. The elaborated films of SnO2 codoped with Ni and Al present were highly transparent; therefore, these thin layers look promising in the use of the window layer in PV solar cells.

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“…Moreover, the photo-catalytic degradation efficiency around 94% was achieved in Ni doped CdS for MO dye for 75 min. Garmim et al [34] described the preparation and structural characterization of Ni, Mg dual doped CdS thin films by spin coating method. They found the increased E g from 2.42 to 2.49 eV by Mg addition up to 5 wt%.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photo-Catalytic and Antibacterial Properties of Ni-Doped Cd0.9Zn0.1S Nanostructures

Jothi¹,

Ganesh

Muthukumaran³

et al. 2021

J Inorg Organomet Polym

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The present work describe the synthesis of Cd 0.9 Zn 0.1 S and Cd 0.87 Zn 0.1 Ni 0.03 S nanostructures by chemical co-precipitation method. The XRD profile proved the cubic crystal structure of the samples without any impurity related phases. The reduced size from 63 to 51 Å and the dissimilarities in lattice parameters and micro-strain has been discussed by Ni addition in Cd 0.87 Zn 0.1 Ni 0.03 S structure. The noticed anomalous optical studies and the elevated transmittance at Ni doped sample suggested them for the fabrication of efficient opto-electronic devices. The energy gap reduction during the substitution of Ni = 3% is explained by the generation of extra energy levels associated with defects within the two bands. The release of additional charge carriers, improved optical property, reduced particle size and more defect generation are responsible for the enhanced photo-catalytic performance of Ni doped Cd 0.9 Zn 0.1 S. The enhanced anti-bacterial capacity in Cd 0.87 Zn 0.1 Ni 0.03 S is described by the collective response of reduced particle size and higher reactive oxygen species (ROS) like O 2 ⋅− , H 2 O 2 and OH ⋅ generating capacity.

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Opto-electrical properties of Ni and Mg co-doped CdS thin films prepared by spin coating technique

Cited by 21 publications

References 43 publications

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films

Preparation and Characterization of Nickel and Aluminum-Codoped SnO2 Thin Films for Optoelectronic Applications

Enhanced Photo-Catalytic and Antibacterial Properties of Ni-Doped Cd0.9Zn0.1S Nanostructures

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Opto-electrical properties of Ni and Mg co-doped CdS thin films prepared by spin coating technique

Cited by 21 publications

References 43 publications

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO2-TiO2 composite thin films

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO2-TiO2 composite thin films

Preparation and Characterization of Nickel and Aluminum-Codoped SnO2 Thin Films for Optoelectronic Applications

Enhanced Photo-Catalytic and Antibacterial Properties of Ni-Doped Cd0.9Zn0.1S Nanostructures

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Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films

Structural, optical, and dielectric characteristics of pulsed laser deposited SnO₂-TiO₂ composite thin films