Opto-electromagnetic properties of carbon-doped zinc-oxide prepared using electrically induced crystallization and ion implantation process for gas sensor application

Liu, Tai Hsiang; Hung, Fei-Yi; Chien, Tao; Chen, Kuan‐Jen

doi:10.1007/s10854-019-02325-6

Cited by 3 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Heteroatoms (C, N, S, F, etc) are usually used as dopants to modify ZnO sensing materials [95a,b,c,d] . The influence of heteroatoms on the material analyzed from XRD and XPS diffraction patterns.…”

Section: Hetero Atomic Dopingmentioning

confidence: 99%

See 1 more Smart Citation

Advances in Doped ZnO Nanostructures for Gas Sensor

Wang

Gong

et al. 2020

The Chemical Record

131

View full text Add to dashboard Cite

Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n-type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n-type ZnO-based semiconductor oxide sensing materials.

show abstract

Section: Hetero Atomic Dopingmentioning

confidence: 99%

“…Since the ion radius of S 2− (0.18 nm) is greater than that of O 2− (0.14 nm), S atom replacing O atom will cause lattice distortion and the diffraction peak shifts to a low angle. Liu et al [95a] . reported that C 4+ (0.16 A) occupied the crystal lattice position of Zn 2+ (0.74 A).…”

Section: Hetero Atomic Dopingmentioning

confidence: 99%

Advances in Doped ZnO Nanostructures for Gas Sensor

Wang

Gong

et al. 2020

The Chemical Record

131

View full text Add to dashboard Cite

show abstract

Optical, Microstructure, and Electromagnetic Properties of (1 − x)ZnO − xCuO Powders Prepared Using Two-Stage Sintering and Direct Synthesis

Liu

Hung

Chen

et al. 2021

JOM

View full text Add to dashboard Cite

SIMS and Numerical Analysis of Asymmetrical Out-Diffusion of Hydrogen and Carbon in CdxZn1−xO:Eu Multilayer

Khosravizadeh,

Lysak,

Przeździecka

et al. 2024

Materials

View full text Add to dashboard Cite

This study employs secondary ion mass spectrometry (SIMS) to investigate the diffusion behavior of hydrogen and carbon in a CdxZn1−xO:Eu multilayer at different annealing temperatures (500–900 °C). The SIMS results reveal a significant out-diffusion of these elements toward the surface and diffusion to the interface region. The diffusion flow rates are asymmetric and favor the interface direction. The depth profiles of diffused elements are fitted using the forward timecentered space (FTCS) iteration method. The activation energies are determined to be 0.35 ± 0.06 eV for hydrogen and 0.33 ± 0.09 eV for carbon, suggesting an interstitial mechanism in CdxZn1−xO. The results indicate that increasing the annealing temperatures leads to a significant decrease in impurity concentrations.

show abstract

Opto-electromagnetic properties of carbon-doped zinc-oxide prepared using electrically induced crystallization and ion implantation process for gas sensor application

Cited by 3 publications

References 21 publications

Advances in Doped ZnO Nanostructures for Gas Sensor

Advances in Doped ZnO Nanostructures for Gas Sensor

Optical, Microstructure, and Electromagnetic Properties of (1 − x)ZnO − xCuO Powders Prepared Using Two-Stage Sintering and Direct Synthesis

SIMS and Numerical Analysis of Asymmetrical Out-Diffusion of Hydrogen and Carbon in CdxZn1−xO:Eu Multilayer

Contact Info

Product

Resources

About