Opto-electronic characterization of starch capped zinc chalcogenides (core-shell) nanocomposites and their application as Schottky device

Abstract

Optoelectronic properties of starch capped zinc chalcogenides (ZnO-ZnS and ZnS-ZnO) core-shell nanocomposites are found to be suitable for use in photoconductive devices. An increase in shell thickness can enhance the charge separation that thereby the efficiency. Schottky diodes based on ZnO-ZnS and ZnS-ZnO core–shells nanocomposites exhibit suitable rectifying behaviour in dark. The fundamental device parameters such as barrier height saturation current (Is) and ideality factor (β) are calculated at 300 K (room temperature) from the I–V curve and the effects of the shell thickness on the device performance has thus been investigated. Variation of ideality factor may be attributed to increasing inhomogeneity and interfacial surface defects across the junction. Schottky diodes are also observed as photodetector in response to blue and green LED lights. Responsivity and quantum efficiency of core/shell based Schottky photodiodes are found to be higher than that of core-based Schottky photodiodes.

Thermal analysis of novel third-generation phase-change materials with zinc as a chemical modifier

“…The zinc chalcogenides have attracted the attention of experimentalists working on metal chalcogenides because of their robust bonding, large energy gaps, high enthalpies of formation, and melting points as compared to most of the other metallic chalcogenides formed by using other elements placed in the II-VI. [1][2][3][4][5][6][7][8][9][10] The crystal dynamics of zinc chalcogenides [4][5][6] suggest their utilization in various applications. [4][5][6][7][8][9][10] Particularly, the recent literature survey of the last decade reveals that zinc is one of the building elements of phase change materials (PCMs) for use in phase change optical memory.…”

“…[1][2][3][4][5][6][7][8][9][10] The crystal dynamics of zinc chalcogenides [4][5][6] suggest their utilization in various applications. [4][5][6][7][8][9][10] Particularly, the recent literature survey of the last decade reveals that zinc is one of the building elements of phase change materials (PCMs) for use in phase change optical memory. [11][12][13][14][15][16][17] These features compelled various research groups to utilize Zn as a modier for preparing multicomponent (binary and ternary) ChGs.…”

Bias voltage effect on impedance, modulus and dielectric spectroscopies of HfO2-interlayered Si-based Schottky diodes at room temperature

“…Investigating electronic infrastructures including but not limited to structural, mechanical, thermal, optical, electrical and dielectric characteristics of semiconductor-based electronic and optoelectronic devices can help improve their performance. By virtue of their ability to conduct current in one direction but not another, Schottky diodes are the basis of most semiconductor-based devices and so they were extensively researched [1][2][3][4][5][6][7][8][9][10].…”