Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure

Al-Kotb, M.S.; Al-Waheidi, Jumana Z.; Kotkata, M. F.

doi:10.1016/j.spmi.2014.02.007

Cited by 13 publications

(6 citation statements)

References 58 publications

(65 reference statements)

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“…In fact, PbSe crystallizes in a cubic structure with space group Fm m 3 . A detailed procedure for the profile-line analysis has been reported previously [34]. Accordingly, the corrected peak breadth (β c ) can be extracted from the measured (β m ) and standard Si (β s ) breadths by using the following equation:…”

Section: Characterization Of Pbse Thin Filmsmentioning

confidence: 99%

Observation of the Meyer–Neldel rule in nanocrystalline PbSe thin films

Kotkata¹,

Al-Kotb²,

El-Houssieny³

2014

Phys. Scr.

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In this paper, nanocrystalline lead selenide (nc-PbSe) thin films have been chemically deposited on glass substrates using appropriate chemical reagents in aqueous alkaline media. The structural, morphological, optical and electrical properties of PbSe thin films have been studied. X-ray diffraction (XRD) analysis indicates that these films have a cubic structure with an average grain size of ∼21 nm. The field emission scanning microscope (FE-SEM) micrograph shows that the films have a dense surface with a smooth granular structure and well-defined grain boundaries. The σ(T) measurements were carried out under vacuum over a wide temperature range (77–350 K) for nc-PbSe films with a thickness of 375 ± 10 nm. The temperature dependence of dark dc conductivity σ(T) in PbSe nanocrystalline (nc) thin films is found to obey the Meyer–Neldel rule (MNR). The MNR correlates the spread in the thermal activation energy of conduction (ΔE) with the exponential pre-factor (σ0) of the Arrhenius conductivity formula.

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Section: Characterization Of Pbse Thin Filmsmentioning

confidence: 99%

Observation of the Meyer–Neldel rule in nanocrystalline PbSe thin films

Kotkata¹,

Al-Kotb²,

El-Houssieny³

2014

Phys. Scr.

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“…Among II-VI semiconductors, CdSe is one of the promising semiconducting materials that have been studied for application in solar cells [1], thin film transistors [2], gamma-ray detectors [3], memory devices [4], optoelectronic [5] and biological applications [6]. It is a direct band gap material with E g = 1.74 eV at 300 K [7] and exhibits quantum confinement at larger size as compared to CdS nanoparticles due to its large exciton Bohr radius (CdSe * 5.6 nm, CdS * 3 nm) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Third-order nonlinear optical response of Ag–CdSe/PVA hybrid nanocomposite

Tripathi

Kaur

et al. 2015

Appl. Phys. A

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Hybrid nanocomposites of II-VI semiconductor nanoparticles are gaining great interest in nonlinear optoelectronic devices. Present work includes the characterization of CdSe polymer nanocomposite prepared by chemical in situ technique. From X-ray diffraction, the hexagonal wurtzite structure of nanoparticles has been confirmed with spherical morphology from transmission electron microscopy. Ag-CdSe hybrid polymer nanocomposite has been prepared chemically at different Ag concentrations. The presence of Ag in hybrid nanocomposite has been confirmed with energy-dispersive X-ray spectroscopy. The effect of varying Ag concentration on the linear and nonlinear optical properties of the nanocomposites has been studied. In linear optical parameters, the linear absorption coefficient, refractive index, extinction coefficient and optical conductivity have been calculated. The third-order nonlinear optical properties have been observed with open-and closed-aperture Z-scan technique. The large nonlinear refractive index *10 -5 cm 2 /W with self-focusing behaviour is due to the combined effect of quantum confinement and thermo-optical effects. The enhanced nonlinearity with increasing Ag content is due to the surface plasmon resonance, which enhances the local electric field near the nanoparticle surface. Thus, Ag-CdSe hybrid polymer nanocomposite has favourable nonlinear optical properties for various optoelectronic applications.

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“…To test the potential application of the model 15-17, four references and analyzed hetero-junctions were constructed. These hetero-junctions are: Au/n-Si as metal-semiconductor hetero-junction, 28 Ni/CdSe/p-Si(001) as metal-semiconductor-semiconductor hetero-junction, 29 Se/n-GaN as semiconductor-semiconductor hetero-junction, 23 and CoSi 2 /n-Si(100) as alloy-semiconductor hetero-junction 30 in published papers. The experimental I-V-T curves of these hetero-junctions are illustrated in Figs.…”

Section: Applicationsmentioning

confidence: 99%

A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height

Changshi

2020

ECS J. Solid State Sci. Technol.

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Schottky Barrier Height, SBH, controls the current flow into electronic and photoelectronic devices based on hetero-junctions. The SBH predicted via the conventional method is sensitive to temperature by forward current-voltage-temperature, I-V-T. This poses some problems in applications of a hetero-junction device. Therefore, one looks for a technique to extract intrinsic SBH of each new hetero-junction. This paper established a simple model for determination of the forward I-V-T characteristics, a real thermionic current, Itc, and SBH. This model was introduced by considering quantum statistics and phenomenological. The proposed methodology can couple two independent plots of each hetero-junction current and helps predict the value of current at any measurement condition. The proposed model was successfully validated via over twenty experimental I–V curves. Therefore, applying the least-squares nonlinear fitting to extract the parameters of the proposed model on Itc-T yields the values of the intrinsic SBH. The results of applications on four hetero-junctions prove that the proposed method is credible in this paper.

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Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure

Cited by 13 publications

References 58 publications

Observation of the Meyer–Neldel rule in nanocrystalline PbSe thin films

Observation of the Meyer–Neldel rule in nanocrystalline PbSe thin films

Third-order nonlinear optical response of Ag–CdSe/PVA hybrid nanocomposite

A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height

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