Opto-Electronic Properties Enhancement of Silicon Solar Cells by Iron Doped ZnO Nanoparticles

Salem, M.; Boussaid, Ahlem; Hamida, Mohamed Bechir Ben

doi:10.1007/s12633-022-02285-3

Cited by 6 publications

(3 citation statements)

References 27 publications

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“…Salem et al found that spincoated Fe-doped zinc oxide (Fe:ZnO) has significantly improved minority carrier lifetime compared to pure ZnO, indicating that Fe doping treatment is a very effective way to improve the performance of the ZnO/p-Si solar cells. [26] In recent years, hybrid solar cells composed of n-Si and PEDOT:PSS have been widely investigated. [27][28][29][30] PEDOT:PSS is a conductive polymer with excellent passivation and high transmittance.…”

Section: Introductionmentioning

confidence: 99%

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Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Liu,

Jiang,

Fan

et al. 2024

Solar RRL

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Hybrid heterojunction solar cells (HHSCs) using different active materials as hole selective transport layer (HTL) and electron selective transport layer (ETL) show great potential in both low‐cost and high‐power conversion efficiency (PCE). Here, PEDOT:PSS/p‐Si/ZnO backcontact heterojunction solar cells were prepared using the simple low‐temperature solution method. PEDOT:PSS was introduced into p‐Si‐based solar cells as an anti‐reflective and passivation layer to optimize device performance. The effect of the work function (WF) of ZnO on device performance were investigated, and a PCE of 10.74% was achieved using low WF ZnO. In addition, the PEDOT:PSS layer was doped with Nafion, and the surface passivation quality of the p‐Si was dramatically enhanced. By optimizing the doping concentration of Nafion, the PCE of the optimized device reached 11.43%, which is currently the highest PCE for p‐Si‐based solar cells using solution method. The findings provide a simple and promising method to achieve high‐performance PEDOT:PSS/p‐Si/ZnO HHSCs.This article is protected by copyright. All rights reserved.

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Section: Introductionmentioning

confidence: 99%

“…Salem et al found that spin‐coated Fe‐doped zinc oxide (Fe:ZnO) has significantly improved minority carrier lifetime compared to pure ZnO, indicating that Fe doping treatment is a very effective way to improve the performance of the ZnO/p‐Si solar cells. [ 26 ]…”

Section: Introductionmentioning

confidence: 99%

Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Liu,

Jiang,

Fan

et al. 2024

Solar RRL

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“…Thus, ensuring or even improving the conversion efficiency of solar cells while reducing costs is the top priority of this current work. Thanks to the development of surface passivation technology [1,2], the PERC solar cell has become a mainstream product in the PV industry. PREC is based on the production of conventional solar cells by depositing a layer or stack of passivation layers (currently usually Al 2 O 3 /SiN x stack) using the PECVD method on the back surface instead of a conventional aluminum backfield [3].…”

Section: Introductionmentioning

confidence: 99%

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Fan,

Shen,

Liu

et al. 2023

Energies

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In recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al2O3/SiNx rear side stacked passivation layer for polycrystalline PERC solar cells was prepared using the plasma- enhanced chemical vapor deposition (PECVD) method. The effects of different Al2O3 layer thicknesses (6.8~25.6 nm), SiNx layer thicknesses (65~150 nm) and SiNx refractive indices (2.0~2.2) on the passivation effect and electrical performance were systematically investigated, which were adjusted by TMA flow rate, conveyor belt speed and the flow ratio of SiH4 and NH3, respectively. In addition, external quantum efficiency (EQE) and elevated temperature-induced degradation experiments were also carried out to check the cell performance. The results showed that the best passivation effect was achieved at 10.8 nm Al2O3 layer, 120 nm SiNx layer and 2.2 SiNx layer refractive index. Under the optimal conditions mentioned above, the highest efficiency was 19.20%, corresponding Voc was 647 mV, Isc was 9.21 A and FF was 79.18%. Meanwhile, when the refraction index was 2.2, the EQE of the cell in the long-wavelength band (800–1000 nm) was improved. Moreover, the decrease in conversion efficiency after 45 h LeTID was around 0.55% under the different refraction indices. The above results can provide a reference for the industrial production of polycrystalline PERC solar cells.

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Investigation of the effects of coating numbers of thin films and metal contact type on physical properties of undoped ZnO, Fe-doped ZnO, and Fe–B co-doped ZnO thin films

Üzar,

Abdulaziz

2024

J Mater Sci: Mater Electron

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This study was designed for three purposes. The first objective was to examine the effects of iron (Fe) and boron (B) elements on the physical properties (structural, electrical, optical, and optoelectronic) of zinc oxide (ZnO) material. For this reason, pristine ZnO, 6% Fe-doped ZnO (Zn0.94Fe0.06O), and 6% Fe-4% B co-doped ZnO (Zn0.90Fe0.06B0.04O) thin films with different thicknesses (4, 6, 8, and 10 layers of coatings for each sample type) were produced using sol–gel dip coating and spraying method on glass and silicon (Si) substrates. In the second stage, we examined the effects of film thickness on optical, electrical, and optoelectronic properties for these three sample types. In the final stage, the MIS (metal/interlayer/semiconductor) structures were created using the three groups of samples produced as interlayers. Gold (Au) was initially applied as the metal contacts in these MIS structures. We investigated optoelectronic and electrical properties such as ideality factor, barrier height, and series resistance for all samples with Au contacts. Afterward, aluminum (Al) contacts were coated on the sample that yielded the best results with Au contacts, and the same properties were re-examined, thereby determining the effects of the contact material, especially on optoelectronic properties. All samples were produced as pure and wurtzite ZnO polycrystalline with preferred orientation along the (002) plane. Although Hall measurement results indicated that all sample groups were n-type semiconductors, the carrier density decreased from − 7.5 × 1013 for pristine ZnO to − 8.7 × 1011 with Fe–B co-doping. The irregular nanodots-shaped surface morphology of ZnO transformed into a homogeneous and smooth one by incorporating boron into the structure. In all sample groups except the 6% Fe-doped ZnO thin films, the band gaps of the thin films decreased as the film thickness increased. For pure ZnO and Fe-B co-doped ZnO sample groups, the band gap energy decreased from 3.245 to 3.215 eV, and from 3.540 to 3.180 eV, respectively, depending on the thicknesses of films. On the other hand, the band gap energy of only Fe–doped ZnO samples increased from 3.34 eV to 3.46 eV. It was observed that as the thicknesses of films increased, the ideality factor of Au/ZnO/p-Si, Au/Zn0.94Fe0.06O/p-Si, and Au/Zn0.90Fe0.06B0.04O/p-Si diodes increased, and the barrier heights of them decreased in the three sample groups. However, when we look at the average value of the electrical properties including all layers, we can say that the best results were obtained for the Fe–B co-doped sample group. Specifically, Fe–B co-doped ZnO sample with 6 layers of coating exhibited an ideality factor of 3.25, a barrier height of approximately 0.51 eV, and a serial resistance of 8.42 kΩ. The best performance as solar cell and photodiode was again obtained for this sample. While the solar cell efficiency of this sample (6 layers of coated Zn0.90Fe0.06B0.04O) was 0.04% with Au contacts, it increased to 0.08% with Al contacts.In summary, it was observed that the electrical, optical, structural, and optoelectronic (as solar cell and photodiode) properties of ZnO material were improved very well made with Al contact and 6 layers of coated Fe and B co-doping. Therefore, Zn0.90Fe0.06B0.04O sample may be promising material for optoelectronic devices.

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Opto-Electronic Properties Enhancement of Silicon Solar Cells by Iron Doped ZnO Nanoparticles

Cited by 6 publications

References 27 publications

Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Investigation of the effects of coating numbers of thin films and metal contact type on physical properties of undoped ZnO, Fe-doped ZnO, and Fe–B co-doped ZnO thin films

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