Opto-electronic properties of electrodeposited ZnTe using zinc anode as counter electrode

Olusola, O. I.; Oluyamo, S. S.; Ajayi, O.A.

doi:10.1016/j.mssp.2020.105494

Cited by 5 publications

(4 citation statements)

References 22 publications

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“…However, one can conclude that the film's conductivity type transition depends only on the variation of growth voltage and not on the time of deposition (Table 2). Our observation affirms that the film electrical conductivity type cannot be tuned under the influence of time variation but requires post-heat-treatment in accordance with previous researches [17,23,[25][26][27].…”

Section: Electrical Conductivity Type Of Electrodeposited Al 2 Sesupporting

confidence: 92%

“…Figure 3 reveals the transmittance characteristic of the film as a function of wavelength, time of deposition, and cathodic potential. High transmittance peaks as observed in Figure 3(A and B), with values >80%, make the films a good receptive surface to any absorber layer [25]. There is a reflection of radiation light in the films as depicted in Figure 4, which is an indication that reflection of light occurs within the electromagnetic region.…”

Section: Optical Properties Of Junction-based Electrodeposited Al 2 Sementioning

confidence: 88%

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Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films

Faremi

Oluyamo

Olubosede

et al. 2021

Materials Science-Poland

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In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.

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Section: Electrical Conductivity Type Of Electrodeposited Al 2 Sesupporting

confidence: 92%

Section: Optical Properties Of Junction-based Electrodeposited Al 2 Sementioning

confidence: 88%

Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films

Faremi

Oluyamo

Olubosede

et al. 2021

Materials Science-Poland

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“…BeSe, ZnTe, ZnSe, MgTe, and CdS have all been previously considered in optoelectronic applications as a result of their wide bandgap and low effective masses. [52][53][54][55][56] Interestingly, these properties are also responsible for the low predicted intrinsic emittance values in this work. The electronic properties of these materials have also been extensively studied experimentally.…”

Section: Discussion Of Discovered Photocathode Materialsmentioning

confidence: 99%

Novel Ultrabright and Air‐Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening

et al. 2021

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The high brightness, low emittance electron beams achieved in modern X‐ray free‐electron lasers (XFELs) have enabled powerful X‐ray imaging tools, allowing molecular systems to be imaged at picosecond time scales and sub‐nanometer length scales. One of the most promising directions for increasing the brightness of XFELs is through the development of novel photocathode materials. Whereas past efforts aimed at discovering photocathode materials have typically employed trial‐and‐error‐based iterative approaches, this work represents the first data‐driven screening for high brightness photocathode materials. Through screening over 74 000 semiconducting materials, a vast photocathode dataset is generated, resulting in statistically meaningful insights into the nature of high brightness photocathode materials. This screening results in a diverse list of photocathode materials that exhibit intrinsic emittances that are up to 4x lower than currently used photocathodes. In a second effort, multiobjective screening is employed to identify the family of M2O (M = Na, K, Rb) that exhibits photoemission properties that are comparable to the current state‐of‐the‐art photocathode materials, but with superior air stability. This family represents perhaps the first intrinsically bright, visible light photocathode materials that are resistant to reactions with oxygen, allowing for their transport and storage in dry air environments.

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“…On the other hand, zinc telluride (ZnTe), which is an important group II–VI compound semiconductor having a direct band gap of ∼2.26 eV, has shown immense potential in a wide range of applications in solar cells, 8 light-emitting diodes, 9 optoelectronic devices, 10 CO 2 reductions, 11 and in wastewater treatment. 12 The solution-processed ZnTe nanostructures demonstrate a few excellent features, namely, low production cost, large surface area, good environmental stability, excellent reusability and prominent visible-light absorption, which make them a prospective photocatalyst.…”

Section: Introductionmentioning

confidence: 99%

Effect of Higher Carrier Mobility of the Reduced Graphene Oxide–Zinc Telluride Nanocomposite on Efficient Charge Transfer Facility and the Photodecomposition of Rhodamine B

Das

Sil

et al. 2022

ACS Omega

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The synthesis of solar-light-responsive zinc telluride (ZnTe) nanoparticles and their composite with reduced graphene oxide (rGO–ZnTe) via a simple hydrothermal reaction is reported. The synthesized nanostructures were comprehensively characterized by a combination of X-ray diffraction and photoelectron spectroscopy, electron microscopy, UV–vis spectroscopy, photoluminescence spectroscopy and thermogravimetric analysis. The effects of graphene oxide on the crystallinity, microstructure, photo-excitation, light absorption, surface area and thermal stability of ZnTe were studied. The current–voltage ( I – V ) characteristics for both as-synthesized ZnTe and rGO–ZnTe composite-based Schottky devices were measured to estimate the charge transport parameters such as dc conductivity, photosensitivity, carrier’s mobility and lifetime. The photocatalytic performance of both the materials in the degradation of an azo dye (Rhodamine B) was subsequently investigated using simulated solar light. The rGO–ZnTe composite exhibited a higher photocatalytic activity (66%) as compared to the as-synthesized ZnTe (23%), essentially due to the synergy between rGO sheets and ZnTe nanoparticles. The role of the carrier’s mobility in the transportation of photo-induced charges (electrons and holes) through the complex network of the composite materials and thus facilitating the photo-degradation process is explained. In the end, the responsible reactive species for the decomposition of Rhodamine B was also interpreted.

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Opto-electronic properties of electrodeposited ZnTe using zinc anode as counter electrode

Cited by 5 publications

References 22 publications

Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films

Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films

Novel Ultrabright and Air‐Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening

Effect of Higher Carrier Mobility of the Reduced Graphene Oxide–Zinc Telluride Nanocomposite on Efficient Charge Transfer Facility and the Photodecomposition of Rhodamine B

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Opto-electronic properties of electrodeposited ZnTe using zinc anode as counter electrode

Cited by 5 publications

References 22 publications

Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

Novel Ultrabright and Air‐Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening

Effect of Higher Carrier Mobility of the Reduced Graphene Oxide–Zinc Telluride Nanocomposite on Efficient Charge Transfer Facility and the Photodecomposition of Rhodamine B

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Product

Resources

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Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films

Optoelectronics applications of electrodeposited p- and n-type Al₂Se₃ thin films