Opto-Electronic Refractometric Sensor Based on Surface Plasmon Resonances and the Bolometric Effect

Elshorbagy, Mahmoud H.; Cuadrado, Alexander; Gómez‐Pedrero, José A.; Alda, Javier

doi:10.3390/app10041211

Cited by 6 publications

(7 citation statements)

References 41 publications

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“…In the presented sensor, the narrow peak is caused by an SPR appearing at the metal/dielectric interface, and the broadband spectral background is produced by the radiation scattered from the grating structure, that is illuminated by the same source. The equation of the total absorption spectrum is explained as below [29]:…”

Section: Resultsmentioning

confidence: 99%

“…To study the electric resistivity of the materials, we explain the temperature coefficient of resistance (TCR) or α equation as bellow [29]:…”

Section: Resultsmentioning

confidence: 99%

“…The value of TCR for silver is α=0.0036 k -1 . Also, the temperature variation is related to the absorbed power and can be calculated as [29]:…”

Section: Resultsmentioning

confidence: 99%

“…The output of the bolometer effect of the sensor is dependent on the resistance of the silver metal thin film, R0. Based on the bellow equation, it is clear that R0 is dependent on the geometry [29]:…”

Section: Fig 5 Maximum Temperature Versus the Incident Em Wavelengthmentioning

confidence: 99%

“…The bridge between Optical and electrical responses is based on an external biasing source that showed the practical performance of the bolometer sensor. The voltage change ΔVout in versus of resistance change ΔR that depending on the biasing voltage or current is given as, respectively [29]:…”

Section: Fig 5 Maximum Temperature Versus the Incident Em Wavelengthmentioning

confidence: 99%

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Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Hamouleh-Alipour

Mir

Farmani

2021

Preprint

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Bolometer sensors are prominent and excellent choice in technology because they do not need cooling. The trade-off between high sensitivity, fast response time, and strong light absorption is a key important challenge in bolometer sensors. Here, the bolometric effect for a high resistance sensitivity plasmonic sensing of total and profile infusion of radiation is studied for the proposed bolometer sensor based on plasmonic multilayer structure at 26° C. In the present study, by generating strong coupling condition between incident wave and surface plasmon polaritons (SPPs), a very narrow absorption spectra with high figure of merit (FoM) is achieved. The analytical model and numerical simulation are fulfilled based on the transfer matrix method (TMM) and 3-D finite-difference time-domain (FDTD), respectively. The narrow absorption spectra that generate by strong coupling with SPPs heats the silver thin film that leads to variation in temperature and supports TE surface mode. This temperature change rectifies the resistance of the metal thin film by the bolometric effect. So, optical characteristics of the proposed metasurface bolometer sensor, including quality factor (Q), sensitivity, and figure of merit (FoM) are calculated that Max sensitivity, FoM, and Q are 17.2 RIU-1, 530 and 434.5, respectively. Finally, we analytically simulate the temperature coefficient of resistance (TCR) in terms of wavelength and refractive index of analyte (na) that this resistance change can be monitored by an external electric model. The proposed plasmonic multilayer configuration is a very compact footprint structure that achieved high resistance sensitivity and FoM in comparison with any previous reports. This proposed thermal, optical, and electric plasmonic metasurface bolometer sensor can be used in different applications such as biophysics, biology, and environmental science.

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Section: Resultsmentioning

confidence: 99%

“…To study the electric resistivity of the materials, we explain the temperature coefficient of resistance (TCR) or α equation as bellow [29]:…”

Section: Resultsmentioning

confidence: 99%

“…The value of TCR for silver is α=0.0036 k -1 . Also, the temperature variation is related to the absorbed power and can be calculated as [29]:…”

Section: Resultsmentioning

confidence: 99%

Section: Fig 5 Maximum Temperature Versus the Incident Em Wavelengthmentioning

confidence: 99%

Section: Fig 5 Maximum Temperature Versus the Incident Em Wavelengthmentioning

confidence: 99%

See 3 more Smart Citations

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Hamouleh-Alipour

Mir

Farmani

2021

Preprint

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Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip

Chen

Jin

et al. 2020

ACS Appl. Mater. Interfaces

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Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 × 320 μm2. The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 μA/RIU and a resolution of 6.4 × 10–6 RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer.

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Optoelectronic refractometric sensing device for gases based on dielectric bow-ties and amorphous silicon solar cells

Elshorbagy

Esteban

Cuadrado

et al. 2022

Sci Rep

Self Cite

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The transformation of an hydrogenated amorphous silicon solar cell (aSiH) into an optoelectronic refratometric sensor has been possible through the addition of dielectric bow-tie resonant structures. The indium transparent oxide top electrode is replaced by a thin metallic layer to selectively prevent the direct transmission of light to the active layer of the cell. Then, an array of dielectric bow-tie structures is placed on top of this electrode, to activate the optical absorption through surface plasmon resonance (SPR). The whole device is exposed to the analyte under measure, which is the surrounding medium. Three different dielectric materials with low, medium, and high refractive index were selected for the bow-ties, namely magnesium fluoride (MgF$$_2$$ 2 ), silicon dioxide (SiO$$_2$$ 2 ), and aluminum nitride (AlN) have been tested as coupling structure for SPR excitation. The maximization of the readout/short circuit current has been achieved through the geometrical parameters of such structure. We have selected the geometrical parameters to maximize the short circuit current delivered by the a-Si cell at a given selected wavelength. The design has been customized to gas measurements application, where the index of refraction is slightly above 1 around 10$$^{-4}$$ - 4 . Our analysis reveals ultra-high sensitivity of $$2.4 \times 10^4$$ 2.4 × 10 4 (mA/W)/RIU, and a figure of merit FOM= 107 RIU$$^{-1}$$ - 1 , when the bow-tie is made of SiO$$_2$$ 2 . A performance rally competitive with those previously reported in literature, with the additional advantage of circunventing both moving parts and spectral interrogation elements.

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Opto-Electronic Refractometric Sensor Based on Surface Plasmon Resonances and the Bolometric Effect

Cited by 6 publications

References 41 publications

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Design and Analytical Evaluation of A High Resistance Sensitivity Bolometer Sensor Based on Plasmonic Metasurface Structure

Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip

Optoelectronic refractometric sensing device for gases based on dielectric bow-ties and amorphous silicon solar cells

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