Opto-Electronics Review

Rogalski, Antoni

doi:10.24425/opelre.2022.140551

2022

DOI: 10.24425/opelre.2022.140551

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Opto-Electronics Review

Antoni Rogalski

Abstract: In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe2/MoS2 and WS2/HfS2 heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared… Show more

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Cited by 3 publications

References 42 publications

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PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Guo,

Zhang,

Zhang

et al. 2024

ACS Appl. Nano Mater.

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The epitaxy of PbTe semiconductor materials on Si substrates can be combined with existing microelectronic technology to produce infrared focal plane arrays. In this work, we used the reactive ion etching(RIE) method to fabricate Si holes. Then, we used the electrochemical epitaxial deposition method to deposit PbTe material on the Si holes to prepare the PbTe/Si heterojunction photodetectors. The detectors have low dark current, and the fastest response speed can reach 0.16 s. We can deposit lead telluride through a simple, template-free electrochemical method. By precisely controlling conditions such as precursor concentration, reaction time, and deposition potential, the morphology of lead telluride can be transformed from pyramidshaped to a nanowire. This facile etching route could also be extended to the preparation of varying morphologies of functional inorganic materials.

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PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Guo,

Zhang,

Zhang

et al. 2024

ACS Appl. Nano Mater.

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Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals

Khalili

Cavallo

Dang

et al. 2023

The Journal of Chemical Physics

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Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.

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Topological insulator photodetectors in HOT infrared detector family

Rogalski

2023

Applied Physics Letters

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The past decade witnessed the emergence of a new generation of room-temperature infrared detectors based on low-dimensional solids. Among these are topological insulating materials. The present work aims to evaluate this class of photodetectors in the so-called high-temperature infrared (high operating temperature) photodetector family. Their performance, such as current responsivity and detectivity, are compared with available HgCdTe photodiodes, interband quantum cascade photodetectors, colloidal quantum dot detectors, and two-dimensional transition metal dichalcogenides.

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Opto-Electronics Review

Cited by 3 publications

References 42 publications

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals

Topological insulator photodetectors in HOT infrared detector family

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